18178529. FERROELECTRIC MEMORY DEVICE AND MEMORY ARRAY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 FERROELECTRIC MEMORY DEVICE AND MEMORY ARRAY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FERROELECTRIC MEMORY DEVICE AND MEMORY ARRAY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
FERROELECTRIC MEMORY DEVICE AND MEMORY ARRAY
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chia-En Huang of Hsinchu County (TW)
Sai-Hooi Yeong of Hsinchu County (TW)
FERROELECTRIC MEMORY DEVICE AND MEMORY ARRAY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18178529 titled 'FERROELECTRIC MEMORY DEVICE AND MEMORY ARRAY
Simplified Explanation
The patent application describes a ferroelectric memory device with specific components arranged in a unique configuration to improve memory performance.
- The memory device includes a word line, source/drain electrodes, a channel layer, a work function layer, and a ferroelectric layer.
- The source/drain electrodes are positioned on opposite sides of the word line and are elevated from it.
- The channel layer has a bottom planar portion and wall portions, with the bottom planar portion extending along the word line's top surface.
- The work function layer is electrically connected to the word line and extends along the channel layer's bottom planar portion and wall portions.
- The ferroelectric layer separates the channel layer from the work function layer.
Potential Applications
This technology could be applied in:
- Non-volatile memory devices
- High-speed data storage systems
Problems Solved
- Improved memory performance
- Enhanced data retention capabilities
Benefits
- Faster data access speeds
- Increased memory density
- Lower power consumption
Potential Commercial Applications
"Enhanced Ferroelectric Memory Device for Next-Generation Data Storage"
Possible Prior Art
There may be prior art related to ferroelectric memory devices and their configurations, but specific examples are not provided in the abstract.
Unanswered Questions
How does this memory device compare to existing non-volatile memory technologies in terms of speed and reliability?
The article does not provide a direct comparison with other non-volatile memory technologies, leaving uncertainty about its performance relative to existing options.
What are the potential challenges in scaling up production of this memory device for mass commercial use?
The article does not address the scalability and production challenges that may arise when transitioning this technology from a prototype to mass production.
Original Abstract Submitted
A ferroelectric memory device and a memory array are provided. The ferroelectric memory device includes a word line; a pair of source/drain electrodes, a channel layer, a work function layer and a ferroelectric layer. The source/drain electrodes are disposed at opposite sides of the word line, and elevated from the word line. The channel layer has a bottom planar portion and wall portions. The bottom planar portion extends along a top surface of the word line, and opposite ends of the bottom planar portion are connected to sidewalls of the source/drain electrodes through opposite ones of the wall portions. The work function layer is electrically connected to the word line, and extends along the bottom planar portion and the wall portions of the channel layer. The ferroelectric layer separates the channel layer from the work function layer.
