Samsung electronics co., ltd. (20240107775). INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Hyunmook Choi of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240107775 titled 'INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The integrated circuit device described in the abstract includes a complex structure of conductive lines, insulating layers, and channel structures for information storage.
- The device has multiple conductive lines on a semiconductor substrate, overlapping in a vertical direction and extending horizontally.
- Insulating layers alternate with the conductive lines vertically and extend horizontally.
- The channel structure includes a core insulating layer, a channel layer, an information storage layer, and a pad pattern.
- The pad pattern covers the top surface of the core insulating layer and contacts the outside wall of the channel layer and the topmost surface of the information storage layer.
Potential Applications
This technology could be applied in advanced memory storage devices, high-speed data processing units, and complex electronic systems requiring dense circuitry.
Problems Solved
This innovation solves the problem of increasing the storage capacity and processing speed of integrated circuits while maintaining a compact design and efficient data transfer.
Benefits
The benefits of this technology include higher data storage capacity, faster data processing speeds, reduced power consumption, and improved overall performance of electronic devices.
Potential Commercial Applications
The potential commercial applications of this technology could include memory chips for smartphones, tablets, computers, servers, and other electronic devices requiring advanced data storage and processing capabilities.
Possible Prior Art
One possible prior art for this technology could be the development of 3D NAND flash memory technology, which also involves stacking layers of conductive lines and insulating layers for data storage.
Unanswered Questions
How does this technology compare to existing memory storage solutions in terms of speed and capacity?
This article does not provide a direct comparison between this technology and existing memory storage solutions.
What are the potential challenges in mass-producing integrated circuit devices with this complex structure?
The article does not address the potential challenges in mass-producing integrated circuit devices with this complex structure.
Original Abstract Submitted
an integrated circuit device includes a plurality of conductive lines on a semiconductor substrate, the plurality of conductive lines extending in a horizontal direction and overlapping each other in a vertical direction, a plurality of insulating layers alternating with the plurality of conductive lines in a vertical direction and extending in the horizontal direction, and a channel structure extending through the plurality of conductive lines and the plurality of insulating layers in the vertical direction. the channel structure includes a core insulating layer, a channel layer on a side wall and a bottom surface of the core insulating layer, an information storage layer on an outside wall of the channel layer, and a pad pattern covering a top surface of the core insulating layer. the pad pattern contacts a portion of the outside wall of the channel layer and a topmost surface of the information storage layer.
