Samsung electronics co., ltd. (20240107774). THREE DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
- 1 THREE DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THREE DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
THREE DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Kyunghwan Lee of Suwon-si (KR)
THREE DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240107774 titled 'THREE DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor memory device described in the abstract includes structures arranged in a first direction on a substrate, with an electrode adjacent to these structures and a ferroelectric layer interposed between the electrode and the structures. Each structure consists of two conductive pillars spaced apart from each other, with a channel layer between them and a first air gap defined by the pillars. Adjacent structures also define a second air gap.
- The semiconductor memory device includes structures arranged in a first direction on a substrate.
- An electrode is positioned adjacent to the structures and extends horizontally in the first direction.
- A ferroelectric layer is located between the electrode and the structures.
- Each structure comprises two conductive pillars spaced apart from each other.
- A channel layer extends from the sidewall of one pillar to the sidewall of the other.
- The conductive pillars define a first air gap, while adjacent structures define a second air gap.
Potential Applications
This technology could be applied in:
- Non-volatile memory devices
- High-density storage solutions
- Advanced computing systems
Problems Solved
This technology addresses:
- Improving memory storage capacity
- Enhancing data retention and retrieval speed
- Reducing power consumption in memory devices
Benefits
The benefits of this technology include:
- Increased memory density
- Faster data access times
- Lower energy consumption in memory operations
Potential Commercial Applications
This technology could be utilized in:
- Consumer electronics
- Data centers
- IoT devices
Possible Prior Art
One possible prior art for this technology is the use of ferroelectric materials in memory devices to enhance data retention capabilities.
Unanswered Questions
How does this technology compare to existing memory solutions in terms of speed and efficiency?
This article does not provide a direct comparison with existing memory solutions in terms of speed and efficiency. Further research or testing would be needed to determine the performance advantages of this technology.
What are the potential challenges in scaling up this technology for mass production?
The article does not address the potential challenges in scaling up this technology for mass production. Factors such as manufacturing costs, production yield rates, and compatibility with existing fabrication processes could pose challenges that need to be explored further.
Original Abstract Submitted
a semiconductor memory device includes first through structures on a substrate, the first through structures arranged in a first direction, an electrode adjacent to the first through structures and extending horizontally in the first direction along the first through structures, and a ferroelectric layer interposed between the electrode and the first through structures. each of the first through structures includes a first conductive pillar and a second conductive pillar spaced apart from each other in the first direction, a channel layer extending from a sidewall of the first conductive pillar to a sidewall of the second conductive pillar, the channel layer interposed between the ferroelectric layer and the first and second conductive pillars, the first and second conductive pillars being spaced apart from each other in the first direction and defining a first air gap. adjacent ones of the first through structures define a second air gap.
