18150281. SPACER FILM SCHEME FORM POLARIZATION IMPROVEMENT simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
SPACER FILM SCHEME FORM POLARIZATION IMPROVEMENT
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
SPACER FILM SCHEME FORM POLARIZATION IMPROVEMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18150281 titled 'SPACER FILM SCHEME FORM POLARIZATION IMPROVEMENT
Simplified Explanation
The present disclosure is about an integrated chip that includes various components such as a lower electrode, a dielectric structure, a ferroelectric data storage structure, an upper electrode, and stressed sidewall spacers. The ferroelectric data storage structure has an orthorhombic phase concentration that varies within the chip.
- The integrated chip consists of a lower electrode, dielectric structure, ferroelectric data storage structure, upper electrode, and stressed sidewall spacers.
- The lower electrode is positioned within the dielectric structure over a substrate.
- The ferroelectric data storage structure is placed over the lower electrode.
- An upper electrode is arranged over the ferroelectric data storage structure.
- Stressed sidewall spacers are present on opposing sides of the upper electrode.
- The ferroelectric data storage structure has an orthorhombic phase concentration that changes from directly below the stressed sidewall spacers to the areas outside of them.
Potential applications of this technology:
- Memory devices: The integrated chip's ferroelectric data storage structure can be utilized in memory devices for data storage and retrieval.
- Sensor technology: The chip's integrated components can be employed in sensors for various applications such as temperature, pressure, or motion sensing.
- Integrated circuits: This technology can be incorporated into integrated circuits for improved performance and functionality.
Problems solved by this technology:
- Enhanced data storage: The ferroelectric data storage structure allows for efficient and reliable data storage within the integrated chip.
- Space optimization: The integration of various components within the chip helps in optimizing space and reducing the overall size of the device.
- Improved sensor performance: The use of stressed sidewall spacers and the orthorhombic phase concentration in the ferroelectric data storage structure can enhance the performance of sensors.
Benefits of this technology:
- Higher data storage capacity: The ferroelectric data storage structure enables increased data storage capacity within the integrated chip.
- Compact design: The integration of components and the use of stressed sidewall spacers allow for a compact and space-efficient design.
- Improved sensor accuracy: The technology employed in the integrated chip can lead to improved accuracy and sensitivity in sensor applications.
Original Abstract Submitted
The present disclosure relates to an integrated chip. The integrated chip includes a lower electrode disposed within a dielectric structure over a substrate. A ferroelectric data storage structure is disposed over the lower electrode and an upper electrode is disposed over the ferroelectric data storage structure. One or more stressed sidewall spacers are arranged on opposing sides of the upper electrode. The ferroelectric data storage structure has an orthorhombic phase concentration that varies from directly below the one or more stressed sidewall spacers to laterally outside of the one or more stressed sidewall spacers.
