Samsung electronics co., ltd. (20240130138). SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Yukio Hayakawa of SUWON-SI (KR)
Yong Seok Kim of SUWON-SI (KR)
Bong Yong Lee of SUWON-SI (KR)
SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240130138 titled 'SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The semiconductor memory device described in the patent application includes a cell substrate, gate electrodes stacked on the cell substrate, first and second channel structures, and a bit line. The first and second channel structures each consist of a ferroelectric layer, a channel layer, a gate insulating layer, and a back gate electrode.
- Cell substrate
- Gate electrodes stacked on the cell substrate
- First and second channel structures with ferroelectric layers
- Bit line on top of gate electrodes
Potential Applications
The technology described in this patent application could be applied in:
- Non-volatile memory devices
- High-speed data storage systems
Problems Solved
This technology addresses the following issues:
- Enhancing memory storage capacity
- Improving data retention and retrieval speeds
Benefits
The benefits of this technology include:
- Increased memory density
- Faster data access times
Potential Commercial Applications
This technology could be utilized in:
- Solid-state drives (SSDs)
- Embedded memory in consumer electronics
Possible Prior Art
One possible prior art for this technology could be:
- Ferroelectric memory devices with similar channel structures
Unanswered Questions
1. How does the ferroelectric layer impact the performance of the memory device? 2. What are the manufacturing costs associated with implementing this technology compared to traditional memory devices?
Original Abstract Submitted
a semiconductor memory device includes a cell substrate, a plurality of gate electrodes sequentially stacked on the cell substrate and extending in a first direction, first and second channel structures extending in a second direction different from the first direction and penetrating the plurality of gate electrodes, and a bit line disposed on the plurality of gate electrodes. the first and second channel structures each include a ferroelectric layer, a channel layer, a gate insulating layer and a back gate electrode, which are sequentially disposed on side walls of the plurality of gate electrodes. the first channel structure and the second channel structure are adjacent to each other in the first direction and share a bit line.