18446043. SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Peng-Chun Liou of Hsinchu City (TW)
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18446043 titled 'SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
Simplified Explanation
The patent application describes a semiconductor device that consists of two conductive structures (first and second) extending vertically, with the second structure spaced apart from the first structure laterally. Additionally, there are multiple third conductive structures that extend laterally across the first and second structures. The first and second structures have varying widths along the lateral direction, and the third structures have different thicknesses corresponding to the varying widths of the first and second structures.
- The semiconductor device has a first and second conductive structure that extend vertically.
- The second conductive structure is laterally spaced apart from the first conductive structure.
- Multiple third conductive structures extend laterally across the first and second conductive structures.
- The first and second conductive structures have varying widths along the lateral direction.
- The third conductive structures have different thicknesses based on the varying widths of the first and second conductive structures.
Potential Applications:
- Integrated circuits
- Microprocessors
- Memory devices
- Power electronics
- Sensors
Problems Solved:
- Improved performance and efficiency of semiconductor devices
- Enhanced conductivity and electrical properties
- Better control of current flow and heat dissipation
Benefits:
- Increased functionality and versatility of semiconductor devices
- Improved power handling capabilities
- Enhanced reliability and durability
- Higher performance and efficiency
- Potential for miniaturization and cost reduction
Original Abstract Submitted
A semiconductor device comprises a first conductive structure extending along a vertical direction and a second conductive structure extending along the vertical direction. The second conductive structure is spaced apart from the first conductive structure along a lateral direction. The semiconductor device further comprises a plurality of third conductive structures each extending along the lateral direction. The plurality of third conductive structures are disposed across the first and second conductive structures. The first and second conductive structures each have a varying width along the lateral direction. The plurality of third conductive structures have respective different thicknesses in accordance with the varying width of the first and second conductive structures.
