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Category:H01L27/24
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Pages in category "H01L27/24"
The following 63 pages are in this category, out of 63 total.
1
- 17453841. HIGH-DENSITY RESISTIVE RANDOM-ACCESS MEMORY ARRAY WITH SELF-ALIGNED BOTTOM ELECTRODE CONTACT simplified abstract (International Business Machines Corporation)
- 17454570. LEVELING DIELECTRIC SURFACES FOR CONTACT FORMATION WITH EMBEDDED MEMORY ARRAYS simplified abstract (International Business Machines Corporation)
- 17456402. APPLYING INERT ION BEAM ETCHING FOR IMPROVING A PROFILE AND REPAIRING SIDEWALL DAMAGE FOR PHASE CHANGE MEMORY DEVICES simplified abstract (International Business Machines Corporation)
- 17457750. SUPPRESSION OF VOID-FORMATION OF PCM MATERIALS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457928. CROSSBAR MEMORY ARRAY IN BACK END OF LINE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457930. CROSSBAR MEMORY ARRAY IN BACK END OF LINE WITH CRYSTALLIZATION FRONT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17493813. ARTIFICIAL INTELLIGENCE (AI) DEVICES WITH IMPROVED THERMAL STABILITY AND SCALING BEHAVIOR simplified abstract (International Business Machines Corporation)
- 17528197. PHASE CHANGE MEMORY GAPS simplified abstract (International Business Machines Corporation)
- 17531149. REDUCING CONTACT RESISTANCE OF PHASE CHANGE MEMORY BRIDGE CELL simplified abstract (International Business Machines Corporation)
- 17540389. UNIFORMLY PATTERNED TWO-TERMINAL DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17544993. IN-SITU LOW TEMPERATURE DIELECTRIC DEPOSITION AND SELECTIVE TRIM OF PHASE CHANGE MATERIALS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545195. GLOBAL HEATER FOR PHASE CHANGE MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545635. STACKED CROSS-POINT PHASE CHANGE MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17546178. ELECTRODE RECESSED PHASE CHANGE MEMORY PORE CELL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17550200. RECESSED LOCAL INTERCONNECT SEMICONDUCTOR MEMORY DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551439. Programming Current Control for Artificial Intelligence (AI) Devices simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551457. MEMORY CELL IN WAFER BACKSIDE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644466. SELF-ALIGNED, SYMMETRIC PHASE CHANGE MEMORY ELEMENT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17679863. SEMICONDUCTOR DEVICE INCLUDING BLOCKING PATTERN, ELECTRONIC SYSTEM, AND METHOD OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17685942. MEMORY DEVICE INCLUDING VERTICAL STACK STRUCTURE, METHOD OF FABRICATING THE SAME, AND ELECTRONIC DEVICE INCLUDING MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17741847. VARIABLE RESISTANCE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17819569. PILLAR AND WORD LINE PLATE ARCHITECTURE FOR A MEMORY ARRAY simplified abstract (Micron Technology, Inc.)
- 17829446. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17838166. PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17851026. PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE WITH AIR GAP simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17862675. MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17873166. MEMORY DEVICE AND FABRICATION METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17896060. PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17896081. MEMORY DEVICE AND METHOD OF MAKING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17931686. RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17932942. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING SELECTIVE METAL NITRIDE DEPOSITION ON DIELECTRIC METAL OXIDE BLOCKING DIELECTRIC simplified abstract (SanDisk Technologies LLC)
- 17936982. HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL simplified abstract (International Business Machines Corporation)
- 17938200. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17941574. MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17942262. SUB-EUV PATTERNING HEATERS FOR BAR MUSHROOM CELL PCM simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17942822. Pillar Based Memory (MRAM) Embedded within the Buried Power Rail within a Backside Power Distribution Network simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17948951. Boron Surface Passivation of Phase Change Memory Material simplified abstract (International Business Machines Corporation)
- 17948990. Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Material simplified abstract (International Business Machines Corporation)
- 17956244. BACKSIDE MRAM WITH FRONTSIDE DEVICES simplified abstract (International Business Machines Corporation)
- 17986237. SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17989085. VARIABLE RESISTANCE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
I
- International business machines corporation (20240099163). Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Material simplified abstract
- International business machines corporation (20240099166). Boron Surface Passivation of Phase Change Memory Material simplified abstract
- International business machines corporation (20240107900). PHASE CHANGE MEMORY CELL SIDEWALL HEATER simplified abstract
- International business machines corporation (20240114699). BACKSIDE MRAM WITH FRONTSIDE DEVICES simplified abstract
- International business machines corporation (20240114807). HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL simplified abstract
- International business machines corporation (20240130142). RESISTIVE RANDOM-ACCESS MEMORY STRUCTURES WITH STACKED TRANSISTORS simplified abstract
- International Business Machines Corporation patent applications on April 18th, 2024
- International Business Machines Corporation patent applications on April 4th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on February 1st, 2024
- International Business Machines Corporation patent applications on February 29th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on February 8th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 14th, 2024
- International Business Machines Corporation patent applications on March 21st, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 28th, 2024
M
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- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on February 1st, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024