17493813. ARTIFICIAL INTELLIGENCE (AI) DEVICES WITH IMPROVED THERMAL STABILITY AND SCALING BEHAVIOR simplified abstract (International Business Machines Corporation)

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ARTIFICIAL INTELLIGENCE (AI) DEVICES WITH IMPROVED THERMAL STABILITY AND SCALING BEHAVIOR

Organization Name

International Business Machines Corporation

Inventor(s)

Injo Ok of Loudonville NY (US)

Alexander Reznicek of Troy NY (US)

Youngseok Kim of Upper Saddle River NJ (US)

Soon-Cheon Seo of Glenmont NY (US)

ARTIFICIAL INTELLIGENCE (AI) DEVICES WITH IMPROVED THERMAL STABILITY AND SCALING BEHAVIOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 17493813 titled 'ARTIFICIAL INTELLIGENCE (AI) DEVICES WITH IMPROVED THERMAL STABILITY AND SCALING BEHAVIOR

Simplified Explanation

The abstract describes a semiconductor structure for phase change memory, which is a type of non-volatile memory technology. The structure includes various layers and elements that enable the storage and retrieval of data.

  • The structure consists of a substrate, which serves as the foundation for the other components.
  • A landing pad is located within the substrate, providing a connection point for other elements.
  • A dielectric layer is positioned outwardly of the substrate, serving as an insulating material.
  • A heater element is located in the substrate, outward of the landing pad, and is responsible for heating the memory cells.
  • The stack is a combination of different chalcogenide layers, which are materials that exhibit phase change properties. The stack includes an inner undoped chalcogenide layer, a doped chalcogenide layer, and an outer undoped chalcogenide layer.
  • The stack is associated with at least one lateral conductive metal layer, which helps in the electrical operation of the memory cells.

Potential applications of this technology:

  • Non-volatile memory: The phase change memory structure can be used in various devices, such as computers, smartphones, and IoT devices, to provide reliable and fast non-volatile memory storage.
  • Data storage: The structure enables the storage of large amounts of data in a compact and efficient manner.

Problems solved by this technology:

  • Non-volatility: Phase change memory provides non-volatile storage, meaning that data is retained even when power is turned off.
  • Fast access times: The structure allows for fast read and write operations, improving overall system performance.
  • High endurance: Phase change memory has a high endurance, meaning it can withstand a large number of read and write cycles without degradation.

Benefits of this technology:

  • High-density storage: The structure enables the storage of a large amount of data in a small physical space.
  • Fast operation: Phase change memory offers fast access times, allowing for quick retrieval and storage of data.
  • Energy efficiency: The structure consumes less power compared to other memory technologies, contributing to energy-efficient devices.


Original Abstract Submitted

A phase change memory semiconductor structure includes a substrate; a landing pad located in the substrate; a dielectric located outwardly of the substrate; a heater element located in the substrate outward of the landing pad; a stack including an inner undoped chalcogenide layer outward of the dielectric, a doped chalcogenide layer outward of the inner undoped chalcogenide layer, and an outer undoped chalcogenide layer outward of the doped chalcogenide layer; and at least one lateral conductive metal layer associated with the stack.

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