17550200. RECESSED LOCAL INTERCONNECT SEMICONDUCTOR MEMORY DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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RECESSED LOCAL INTERCONNECT SEMICONDUCTOR MEMORY DEVICE

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Chih-Chao Yang of Glenmont NY (US)

Theodorus E. Standaert of Clifton Park NY (US)

Daniel Charles Edelstein of White Plains NY (US)

RECESSED LOCAL INTERCONNECT SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17550200 titled 'RECESSED LOCAL INTERCONNECT SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation

The abstract describes a semiconductor device and its formation process. Here is a simplified explanation:

  • The semiconductor device consists of a memory device placed on top of a first bottom interconnect.
  • The first bottom interconnect is embedded in a first dielectric layer, which provides insulation and support.
  • Additionally, a second bottom interconnect is embedded in the same dielectric layer, positioned adjacent to the first bottom interconnect.
  • The top surface of the second bottom interconnect is recessed, meaning it is lower in height compared to the top surface of the first bottom interconnect.

Potential Applications:

  • This semiconductor device can be used in various electronic devices such as computers, smartphones, and tablets.
  • It can be utilized in memory modules, processors, and other integrated circuits.

Problems Solved:

  • The formation of the semiconductor device solves the problem of interconnect placement and integration within a dielectric layer.
  • It provides a solution for embedding multiple bottom interconnects in a single dielectric layer, allowing for compact and efficient circuit design.

Benefits:

  • The recessed top surface of the second bottom interconnect allows for better integration with other components and reduces the risk of interference.
  • The embedded interconnects in the dielectric layer provide improved electrical performance and reliability.
  • The compact design of the semiconductor device enables smaller and more efficient electronic devices.


Original Abstract Submitted

A semiconductor device and formation thereof. The semiconductor device includes a memory device located on top of a first bottom interconnect, wherein the first bottom interconnect is embedded in a first dielectric layer. The semiconductor device further includes a second bottom interconnect embedded in the first dielectric layer, wherein the second bottom interconnect is adjacent to the first bottom interconnect. A top surface of the second bottom interconnect is recessed relative to a top surface of the first bottom interconnect.

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