17457930. CROSSBAR MEMORY ARRAY IN BACK END OF LINE WITH CRYSTALLIZATION FRONT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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CROSSBAR MEMORY ARRAY IN BACK END OF LINE WITH CRYSTALLIZATION FRONT

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Devendra K. Sadana of Pleasantville NY (US)

Ning Li of White Plains NY (US)

Bahman Hekmatshoartabari of White Plains NY (US)

CROSSBAR MEMORY ARRAY IN BACK END OF LINE WITH CRYSTALLIZATION FRONT - A simplified explanation of the abstract

This abstract first appeared for US patent application 17457930 titled 'CROSSBAR MEMORY ARRAY IN BACK END OF LINE WITH CRYSTALLIZATION FRONT

Simplified Explanation

The patent application describes a memory structure consisting of a crystallization seed layer, a phase change material layer, and top and bottom electrodes. This structure is arranged in a crossbar array configuration.

  • The memory structure includes a crystallization seed layer, a phase change material layer, and top and bottom electrodes.
  • The lattice constant of the phase change material layer matches that of the crystallization seed layer.
  • The memory structures are arranged in a crossbar array configuration.
  • The method involves forming the crystallization seed layer, phase change material layer, and top and bottom electrodes on the substrate.

Potential Applications

  • Memory devices
  • Data storage systems
  • Computing systems

Problems Solved

  • Provides a memory structure with improved crystallization properties
  • Enables efficient data storage and retrieval

Benefits

  • Enhanced performance and reliability of memory devices
  • Increased data storage capacity
  • Faster data access and retrieval


Original Abstract Submitted

A crystallization seed layer in a substrate, a phase change material layer, the phase change material layer includes a similar lattice constant as a lattice constant of the crystallization seed layer, a top electrode adjacent to a first vertical side surface and a bottom electrode adjacent to a second vertical side surface of the phase change material layer. A plurality of memory structures configured in a crossbar array, each including a crystallization seed layer, a phase change material layer above, a top electrode adjacent to a first vertical side surface and a bottom electrode adjacent to a second vertical side surface of the phase change material layer. A method including forming a crystallization seed layer, forming a phase change material layer, forming a top electrode and a bottom electrode on the substrate, each adjacent to a vertical side surface of the phase change material layer.

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