17873166. MEMORY DEVICE AND FABRICATION METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

MEMORY DEVICE AND FABRICATION METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Yu-Chao Lin of Hsinchu City (TW)

Jung-Piao Chiu of Kaohsiung City (TW)

Shao-Ming Yu of Hsinchu County (TW)

Yuan-Tien Tu of Chiayi County (TW)

Tung-Ying Lee of Hsinchu City (TW)

MEMORY DEVICE AND FABRICATION METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17873166 titled 'MEMORY DEVICE AND FABRICATION METHOD THEREOF

Simplified Explanation

The memory device described in the patent application includes several layers and components such as a substrate, signal lines, dielectric layers, a phase change layer, and electrodes. Here is a simplified explanation of the abstract:

• The memory device has a substrate, on which a first signal line is placed.
• A first dielectric layer is then added on top of the first signal line.
• On top of the first dielectric layer, a phase change layer is deposited.
• A second dielectric layer is then added on top of the phase change layer.
• The first electrode and the second electrode penetrate through the layers, with the phase change layer located between them.
• A second signal line is placed over the second dielectric layer.
• The first signal line is electrically connected to the first electrode, and the second signal line is electrically connected to the second electrode.

Potential applications of this technology:

• Memory devices: The described memory device can be used in various electronic devices that require non-volatile memory, such as computers, smartphones, and IoT devices.
• Data storage: The phase change layer allows for the storage of data, making it suitable for applications that require high-density data storage.

Problems solved by this technology:

• Non-volatile memory: The phase change layer enables the memory device to retain data even when power is turned off, solving the problem of data loss in volatile memory.
• High-density data storage: The design of the memory device allows for a compact and efficient storage solution, addressing the need for increased data storage capacity in modern electronic devices.

Benefits of this technology:

• Fast read/write speeds: The phase change layer enables quick switching between different states, resulting in fast read and write operations.
• Low power consumption: The memory device consumes less power compared to traditional memory technologies, making it energy-efficient.
• Scalability: The design of the memory device allows for easy integration into existing electronic devices and potential scalability for future advancements in memory technology.

Original Abstract Submitted

A memory device includes a substrate, a first signal line, a first dielectric layer, a phase change layer, a second dielectric layer, a first electrode, a second electrode and a second signal line. The first signal line is disposed over the substrate. The first dielectric layer is disposed over the first signal line. The phase change layer is disposed over the first dielectric layer. The second dielectric layer is disposed over the phase change layer. The first electrode and the second electrode are penetrating through the first dielectric layer, the phase change layer and the second dielectric layer, wherein the phase change layer is located between the first electrode and the second electrode. The second signal line is disposed over the second dielectric layer, wherein the first signal line is electrically connected with the first electrode, and the second signal line is electrically connected with the second electrode.