International business machines corporation (20240099166). Boron Surface Passivation of Phase Change Memory Material simplified abstract

Boron Surface Passivation of Phase Change Memory Material

Organization Name

international business machines corporation

Inventor(s)

Luxherta Buzi of Chappaqua NY (US)

ROBERT L. Bruce of White Plains NY (US)

Charlie Tabachnick of Astoria NY (US)

Marinus Johannes Petrus Hopstaken of Carmel NY (US)

Boron Surface Passivation of Phase Change Memory Material - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240099166 titled 'Boron Surface Passivation of Phase Change Memory Material

Simplified Explanation

The abstract describes techniques for improving the switching properties of phase change memory devices by boron surface passivation of the phase change memory material. The phase change memory device includes phase change memory cells with a boron-containing and nitrogen-containing bilayer on the sidewalls of the phase change material to protect it from exposure to oxygen. An ovonic threshold switch can be implemented between the electrodes in series with the phase change material. The method of fabricating these devices is also provided.

• Boron surface passivation technique for improving switching properties of phase change memory devices
• Phase change memory cells with boron-containing and nitrogen-containing bilayer on sidewalls to protect from oxygen exposure
• Implementation of ovonic threshold switch between electrodes in series with phase change material

Potential Applications

The technology can be applied in:

• Non-volatile memory devices
• Data storage systems
• Embedded systems

Problems Solved

The technology addresses issues such as:

• Switching speed and reliability in phase change memory devices
• Protection of phase change material from oxygen exposure
• Enhancing overall performance of memory devices

Benefits

The benefits of this technology include:

• Improved switching properties
• Enhanced durability and reliability
• Increased data storage efficiency

Potential Commercial Applications

Potential commercial applications of this technology can be found in:

• Consumer electronics
• Cloud computing
• Internet of Things (IoT) devices

Possible Prior Art

One possible prior art could be the use of other passivation techniques in phase change memory devices, such as silicon oxide or nitride passivation layers.

How does the boron surface passivation technique compare to other passivation methods in terms of effectiveness and cost?

The article does not provide a direct comparison between the boron surface passivation technique and other passivation methods in terms of effectiveness and cost. Further research or experimentation may be needed to determine the advantages and disadvantages of each method.

What are the long-term effects of boron surface passivation on the performance and durability of phase change memory devices?

The article does not discuss the long-term effects of boron surface passivation on the performance and durability of phase change memory devices. Future studies or extended testing could provide insights into the longevity and stability of devices utilizing this technique.

Original Abstract Submitted

techniques for improving switching properties of phase change memory devices by boron surface passivation of the phase change memory material are provided. in one aspect, a phase change memory device includes: one or more phase change memory cells, each having a phase change material between a bottom electrode and a top electrode; and a boron-containing and nitrogen-containing bilayer on sidewalls of the phase change material to protect the phase change material from exposure to oxygen. an ovonic threshold switch can be implemented between the bottom electrode and the top electrode, in series with the phase change material. a method of fabricating the present phase change memory devices is also provided.