17679863. SEMICONDUCTOR DEVICE INCLUDING BLOCKING PATTERN, ELECTRONIC SYSTEM, AND METHOD OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE INCLUDING BLOCKING PATTERN, ELECTRONIC SYSTEM, AND METHOD OF FORMING THE SAME
Organization Name
Inventor(s)
Hyunmook Choi of Suwon-si (KR)
Sanghoon Kim of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE INCLUDING BLOCKING PATTERN, ELECTRONIC SYSTEM, AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17679863 titled 'SEMICONDUCTOR DEVICE INCLUDING BLOCKING PATTERN, ELECTRONIC SYSTEM, AND METHOD OF FORMING THE SAME
Simplified Explanation
The patent application describes a semiconductor device with a horizontal wiring layer, a stack structure, and a pillar structure. The stack structure consists of insulating and electrode layers, while the pillar structure includes a variable resistive layer, a channel layer, a gate dielectric layer, and a blocking pattern.
- The semiconductor device has a horizontal wiring layer on a substrate.
- A stack structure is placed on the horizontal wiring layer, consisting of insulating and electrode layers stacked alternately.
- The pillar structure extends into the horizontal wiring layer and goes through the stack structure.
- The electrode layers in the stack structure include one or more selection lines at the top and word lines surrounding the stack structure.
- The pillar structure comprises a variable resistive layer, a channel layer, a gate dielectric layer, and a blocking pattern adjacent to one of the selection lines.
Potential applications of this technology:
- Memory devices: The stack structure and pillar structure can be utilized in memory devices to store and retrieve data.
- Logic devices: The semiconductor device can be used in logic circuits to perform various computational tasks.
- Integrated circuits: This technology can be applied in the manufacturing of integrated circuits for a wide range of electronic devices.
Problems solved by this technology:
- Improved performance: The stack structure and pillar structure enhance the functionality and efficiency of the semiconductor device.
- Space-saving design: The horizontal wiring layer and stack structure allow for a compact layout, enabling more components to be packed into a smaller area.
- Enhanced data storage: The variable resistive layer in the pillar structure enables efficient data storage and retrieval.
Benefits of this technology:
- Higher density: The compact design of the semiconductor device allows for a higher density of components, leading to increased functionality.
- Improved speed: The optimized structure and layout contribute to faster data processing and retrieval.
- Enhanced reliability: The stack structure and pillar structure provide stability and durability to the semiconductor device, ensuring reliable operation over time.
Original Abstract Submitted
A semiconductor device includes a horizontal wiring layer on a substrate, a stack structure disposed on the horizontal wiring layer and including insulating layers and electrode layers alternately stacked on each other, and a pillar structure extending into the horizontal wiring layer and extending through the stack structure. The electrode layers include one or a plurality of selection lines adjacent to an uppermost end of the stack structure, and word lines surrounding the stack structure below the one or plurality of selection lines. The pillar structure includes a variable resistive layer, a channel layer between the variable resistive layer and the stack structure, a gate dielectric layer between the channel layer and the stack structure, and a blocking pattern disposed between the variable resistive layer and the channel layer and being adjacent to a first selection line among the one or plurality of selection lines.
