17838166. PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chin I Wang of Tainan (TW)

Huan-Chieh Chen of Taichung (TW)

Chia-Wen Zhong of Taichung (TW)

Yao-Wen Chang of Taipei (TW)

PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17838166 titled 'PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF FORMING THE SAME

Simplified Explanation

The abstract describes a memory device and methods of forming it. The memory device includes a substrate, a bottom electrode, a top electrode, and a phase change layer. The phase change layer is a laminated structure with alternating layers of different phase change materials.

• The memory device includes a substrate, bottom electrode, top electrode, and a phase change layer.
• The phase change layer is a laminated structure with alternating layers of different phase change materials.
• The first layer of phase change material is chemically different from the second layer.
• The first layer of phase change material is thinner than the second layer.

Potential applications of this technology:

• Memory devices in electronic devices such as computers, smartphones, and tablets.
• Non-volatile memory for data storage in various industries including automotive, aerospace, and healthcare.

Problems solved by this technology:

• Provides a memory device with improved performance and reliability.
• Allows for more efficient data storage and retrieval.
• Reduces power consumption and heat generation.

Benefits of this technology:

• Enhanced memory device performance.
• Increased data storage capacity.
• Improved energy efficiency.

Original Abstract Submitted

Various embodiments of the present disclosure provide a memory device and methods of forming the same. In one embodiment, a memory device is provided. The memory device includes a substrate, a bottom electrode disposed over the substrate, a top electrode disposed over the bottom electrode, and a phase change layer disposed between the top electrode and the bottom electrode. The phase change layer is a laminated structure comprising a first layer of phase change material and a second layer of phase change material alternatingly stacked, and the first layer of phase change material is chemically different from the second layer of phase change material, wherein the first layer of phase change material has a first thickness that is less than a second thickness of the second layer of phase change material.