17454570. LEVELING DIELECTRIC SURFACES FOR CONTACT FORMATION WITH EMBEDDED MEMORY ARRAYS simplified abstract (International Business Machines Corporation)

LEVELING DIELECTRIC SURFACES FOR CONTACT FORMATION WITH EMBEDDED MEMORY ARRAYS

Organization Name

International Business Machines Corporation

Inventor(s)

Michael Rizzolo of Delmar NY (US)

Devika Sarkar Grant of Rensselaer NY (US)

SON Nguyen of Schenectady NY (US)

LEVELING DIELECTRIC SURFACES FOR CONTACT FORMATION WITH EMBEDDED MEMORY ARRAYS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17454570 titled 'LEVELING DIELECTRIC SURFACES FOR CONTACT FORMATION WITH EMBEDDED MEMORY ARRAYS

Simplified Explanation

The patent application describes a semiconductor structure that uses a self-leveling, flowable dielectric material to fill gaps between vertical structures in non-volatile memory devices. This structure helps increase the density of memory devices by providing a flat dielectric surface between multiple contacts in the metal layer.

• The semiconductor structure includes a first portion of contacts that connect to pillar-based memory devices in an array.
• These contacts are located in a conventional interlayer dielectric material beneath the self-leveling dielectric material.
• The flowable, self-leveling material ensures a flat dielectric surface during contact formation.

Potential Applications

• Non-volatile memory devices
• Semiconductor manufacturing

Problems Solved

• Gap filling between vertical structures in memory devices
• Increasing memory device density

Benefits

• Provides a flat dielectric surface between contacts in the metal layer
• Enables increased memory device density
• Improves contact formation during semiconductor manufacturing

Original Abstract Submitted

An approach providing a semiconductor structure that provides a self-leveling, flowable, dielectric material for a gap fill material between vertical structures in many emerging non-volatile memory devices that are being formed with vertical structures for increasing memory device density. The semiconductor structure provides a flat dielectric surface between a plurality of contacts in a back end of the line metal layer in both the memory region and in the logic region of the semiconductor structure. The semiconductor structure includes a first portion of the plurality of contacts that each connect to a pillar-based memory device in an array of pillar-based memory devices. The first portion of the contacts that each connect to a pillar-based memory device in the array of memory devices reside in a conventional interlayer dielectric material under the self-leveling dielectric material. The flowable, self-leveling material provides a flat dielectric surface during contact formation.