17457928. CROSSBAR MEMORY ARRAY IN BACK END OF LINE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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CROSSBAR MEMORY ARRAY IN BACK END OF LINE

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Devendra K. Sadana of Pleasantville NY (US)

Ning Li of White Plains NY (US)

Bahman Hekmatshoartabari of White Plains NY (US)

CROSSBAR MEMORY ARRAY IN BACK END OF LINE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17457928 titled 'CROSSBAR MEMORY ARRAY IN BACK END OF LINE

Simplified Explanation

The patent application describes a structure consisting of a bottom electrode, a phase change material layer, and a top electrode that are vertically aligned. The phase change material layer has a similar lattice constant as the bottom electrode.

  • The structure includes a bottom electrode, a phase change material layer, and a top electrode that are vertically aligned.
  • The phase change material layer has a lattice constant similar to the bottom electrode.
  • The top electrode is adjacent to the first vertical side surface of the phase change material layer.
  • The bottom electrode is adjacent to the second vertical side surface of the phase change material layer.
  • A dielectric material is formed to horizontally isolate the bottom electrode and the top electrode.

Potential applications of this technology:

  • Non-volatile memory devices
  • Phase change random access memory (PCRAM)
  • Data storage devices

Problems solved by this technology:

  • Provides a vertically aligned structure for efficient phase change material switching.
  • Helps to reduce power consumption and improve device performance.

Benefits of this technology:

  • Improved efficiency in phase change material switching.
  • Lower power consumption.
  • Enhanced device performance.


Original Abstract Submitted

A bottom electrode, a phase change material layer, the phase change material layer includes a similar lattice constant as a lattice constant of the bottom electrode, and a top electrode vertically aligned. A phase change material layer, a top electrode adjacent to a first vertical side surface of the phase change material layer, and a bottom electrode adjacent to a second vertical side surface of the phase change material layer. Forming a phase change material layer, forming a top electrode adjacent to a first vertical side surface and overlapping a first portion of an upper horizontal surface of the phase change material layer, forming a bottom electrode, adjacent to a second vertical side surface and overlapping a second portion of the upper horizontal surface of the phase change material layer, and forming a dielectric material horizontally isolating the bottom electrode and the top electrode.

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