17456402. APPLYING INERT ION BEAM ETCHING FOR IMPROVING A PROFILE AND REPAIRING SIDEWALL DAMAGE FOR PHASE CHANGE MEMORY DEVICES simplified abstract (International Business Machines Corporation)

APPLYING INERT ION BEAM ETCHING FOR IMPROVING A PROFILE AND REPAIRING SIDEWALL DAMAGE FOR PHASE CHANGE MEMORY DEVICES

Organization Name

International Business Machines Corporation

Inventor(s)

Luxherta Buzi of Yorktown Heights NY (US)

Thitima Suwannasiri of Oak Ridge NJ (US)

Lynne Marie Gignac of Beacon NY (US)

ROBERT L. Bruce of White Plains NY (US)

SEBASTIAN Ulrich Engelmann of White Plains NY (US)

APPLYING INERT ION BEAM ETCHING FOR IMPROVING A PROFILE AND REPAIRING SIDEWALL DAMAGE FOR PHASE CHANGE MEMORY DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17456402 titled 'APPLYING INERT ION BEAM ETCHING FOR IMPROVING A PROFILE AND REPAIRING SIDEWALL DAMAGE FOR PHASE CHANGE MEMORY DEVICES

Simplified Explanation

The patent application describes a process for improving the profile and repairing sidewall damage in phase change memory devices. This is achieved by using inert ion beam etching to trim the damaged sidewall of the phase change memory material. The etching is performed at a low energy, low temperature, and at a small angle between the ion beam and the sidewall surface tangent.

• The process involves applying inert ion beam etching to trim a damaged sidewall of phase change memory material.
• The sidewall damage is caused by reactive ion etching using halogens.
• The inert ion beam etching is performed with low energy.
• The inert ion beam etching is performed at a predetermined low temperature.
• The inert ion beam is directed at a predetermined small angle relative to the surface tangent of the sidewall.

Potential Applications

• Manufacturing and repair of phase change memory devices.
• Improving the performance and reliability of phase change memory devices.

Problems Solved

• Sidewall damage in phase change memory devices caused by reactive ion etching using halogens.
• Inconsistent profile of the phase change memory material.

Benefits

• Improved profile and sidewall integrity of the phase change memory material.
• Enhanced performance and reliability of phase change memory devices.
• Cost-effective repair process for damaged sidewalls.

Original Abstract Submitted

A process of improving a profile and repairing sidewall damage for phase change memory devices. The process includes applying inert ion beam etching to trim a sidewall of a layer of phase change memory material in a phase change memory device, where the sidewall has been damaged in reactive ion etching using halogens. In the process, the inert ion beam etching is with low energy. In the process, applying the inert ion beam etching to trim the sidewall is at a predetermined low temperature. In the process, applying the inert ion beam etching to trim the sidewall is at a predetermined small angle between an inert ion beam and a surface tangent of the sidewall.