17741847. VARIABLE RESISTANCE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
VARIABLE RESISTANCE MEMORY DEVICE
Organization Name
Inventor(s)
Doyoon Kim of Hwaseong-si (KR)
Hyunjae Song of Hwaseong-si (KR)
Seungyeul Yang of Hwaseong-si (KR)
VARIABLE RESISTANCE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17741847 titled 'VARIABLE RESISTANCE MEMORY DEVICE
Simplified Explanation
The abstract describes a variable resistance memory device that includes multiple layers and materials to enhance its performance. The device consists of a supporting layer made of an insulating material, a variable resistance layer with metal oxide and metal nanoparticles, a channel layer, a gate insulating layer, and a gate electrode.
- The variable resistance layer is composed of a first layer containing metal oxide and metal nanoparticles, and a second layer made of an oxide.
- The metal nanoparticles in the variable resistance layer are capable of combining with oxygen ions of the metal oxide, leading to an increase in oxygen vacancies.
- This technology aims to improve the functionality and efficiency of variable resistance memory devices.
Potential Applications
- This technology can be used in various electronic devices that require non-volatile memory, such as smartphones, tablets, and computers.
- It can also be applied in data storage systems, including solid-state drives (SSDs) and cloud storage servers.
Problems Solved
- The variable resistance memory device addresses the need for high-performance non-volatile memory solutions.
- By incorporating metal nanoparticles, it enhances the device's ability to store and retrieve data efficiently.
- The technology also tackles the challenge of reducing power consumption and increasing the lifespan of memory devices.
Benefits
- The variable resistance memory device offers improved data storage capacity and faster read/write speeds.
- It provides a more reliable and durable memory solution compared to traditional memory technologies.
- The use of metal nanoparticles increases the device's stability and reduces power consumption, leading to energy-efficient operation.
Original Abstract Submitted
A variable resistance memory device includes: a supporting layer including an insulating material; a variable resistance layer on the supporting layer and including a first layer including a metal oxide and metal nanoparticles, the variable resistance layer including a second layer on the first layer and including an oxide; a channel layer on the variable resistance layer; a gate insulating layer on the channel layer; and a gate electrode on the gate insulating layer. The metal nanoparticles in the variable resistance layer include a first metal capable of combining with oxygen ions of the metal oxide, thereby increasing oxygen vacancies.
