17896060. PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Shao-Ming Yu of Hsinchu County (TW)

Yu-Chao Lin of Hsinchu City (TW)

Tung-Ying Lee of Hsinchu City (TW)

PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17896060 titled 'PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

Simplified Explanation

The abstract describes a phase-change memory device with a first electrode, a stack, and a multi-layered spacer.

  • The phase-change memory device includes a first electrode connected to an interconnect wiring, a stack with a phase-change layer and a second electrode, and a multi-layered spacer covering the stack.
  • The multi-layered spacer has a first portion covering the top surface of the stack and a second portion covering the sidewall of the stack.
    • Potential Applications:**
  • Data storage in electronic devices
  • Non-volatile memory applications
  • High-speed memory devices
    • Problems Solved:**
  • Providing a reliable and efficient phase-change memory device
  • Enhancing data storage capabilities in electronic devices
  • Improving memory performance and speed
    • Benefits:**
  • Increased data storage capacity
  • Faster memory access and retrieval
  • Enhanced reliability and efficiency in memory devices


Original Abstract Submitted

A phase-change memory device and a method for fabricating the same are provided. The phase-change memory device comprises a first electrode, a stack and a multi-layered spacer. The first electrode is disposed on and electrically connected to an interconnect wiring of the interconnect structure. The stack is disposed on the first electrode and comprises a phase-change layer disposed on the first electrode and a second electrode disposed on the phase-change layer. The multi-layered spacer covers the stack. A first portion of the multi-layered spacer covers a top surface of the stack, and a second portion of the multi-layered spacer covers a sidewall of the stack.

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