17941574. MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Paul Michael Solomon of Westchester NY (US)

Takashi Ando of Eastchester NY (US)

Eduard Albert Cartier of New York NY (US)

John Rozen of Hastings on Hudson NY (US)

MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17941574 titled 'MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS

Simplified Explanation

The abstract describes a grain-boundary self-aligned resistive memory structure that allows for the formation of multiple oxide-based ReRAM elements in parallel, each with its own compliance resistor. This structure aims to reduce variability in the composite ReRAM cell by forming multiple filaments, one per element.

• Enables closely-packed formation of multiple oxide-based ReRAM elements in parallel
• Each element has its own compliance resistor
• Capable of forming multiple filaments, reducing variability in the composite ReRAM cell

Potential Applications

The technology could be applied in:

• Memory storage devices
• Neuromorphic computing
• Internet of Things (IoT) devices

Problems Solved

• Variability in composite ReRAM cells
• Closely-packed formation of multiple ReRAM elements

Benefits

• Improved reliability and performance
• Enhanced data storage capacity
• Reduced power consumption

Original Abstract Submitted

A grain-boundary self-aligned resistive memory structure is provided enabling the closely-packed formation of multiple, oxide-based, ReRAM elements in parallel, each with its own compliance resistor. The structure is capable of forming multiple filaments, one per element, with the aim of reducing the variability in the composite ReRAM cell.