17457750. SUPPRESSION OF VOID-FORMATION OF PCM MATERIALS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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SUPPRESSION OF VOID-FORMATION OF PCM MATERIALS

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Cheng-Wei Cheng of White Plains NY (US)

ROBERT L. Bruce of White Plains NY (US)

Matthew Joseph Brightsky of Armonk NY (US)

Gloria Wing Yun Fraczak of Queens NY (US)

SUPPRESSION OF VOID-FORMATION OF PCM MATERIALS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17457750 titled 'SUPPRESSION OF VOID-FORMATION OF PCM MATERIALS

Simplified Explanation

The patent application describes a method for depositing a phase change memory material layer within a dielectric layer on a substrate. The process involves several steps, including depositing a bottom electrode, a dielectric layer, and a liner layer on the substrate. One or more structures are patterned within the dielectric layer. A selectivity promotion layer is then deposited on top of the liner layer. This selectivity promotion layer is etched to expose the top surface of the dielectric layer and a portion of the bottom electrode. Finally, the phase change memory material layer is deposited within the void of the structures between the selectivity promotion layer.

  • Bottom electrode is deposited on a substrate
  • Dielectric layer is deposited on the bottom electrode
  • Structures are patterned within the dielectric layer
  • Liner layer is deposited on top of the dielectric layer and the bottom electrode
  • Selectivity promotion layer is deposited on top of the liner layer
  • Selectivity promotion layer is etched to expose the top surface of the dielectric layer and a portion of the bottom electrode
  • Phase change memory material layer is deposited within the void of the structures between the selectivity promotion layer

Potential Applications

  • Memory devices
  • Data storage systems
  • Electronic devices requiring non-volatile memory

Problems Solved

  • Efficient deposition of phase change memory material layer
  • Enhanced selectivity in exposing the top surface of the dielectric layer and the bottom electrode

Benefits

  • Improved performance and reliability of memory devices
  • Higher data storage capacity
  • Cost-effective manufacturing process


Original Abstract Submitted

A bottom electrode is deposited on a substrate. A dielectric layer is deposited on the bottom electrode. One or more structures are patterned within the dielectric layer. A liner layer is deposited on top of the dielectric layer and the bottom electrode. A selectivity promotion layer is deposited on top of the liner layer. The selectivity promotion layer is etched to expose a top surface of the dielectric layer and a portion of the bottom electrode. A phase change memory material layer is deposited within a void of the one or more structures between the selectivity promotion layer.

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