17942262. SUB-EUV PATTERNING HEATERS FOR BAR MUSHROOM CELL PCM simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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SUB-EUV PATTERNING HEATERS FOR BAR MUSHROOM CELL PCM

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Samuel Sung Shik Choi of Ballston Lake NY (US)

Kevin W. Brew of Niskayuna NY (US)

Raghuveer Reddy Patlolla of Guilderland NY (US)

SUB-EUV PATTERNING HEATERS FOR BAR MUSHROOM CELL PCM - A simplified explanation of the abstract

This abstract first appeared for US patent application 17942262 titled 'SUB-EUV PATTERNING HEATERS FOR BAR MUSHROOM CELL PCM

Simplified Explanation

The patent application describes a phase change material (PCM) memory cell with a metal heater element of sub-EUV dimension, improving heat insulation and reducing amorphous phase change material volumes.

  • Metal heater element of sub-EUV dimension
  • Circular via structure with seamless metal-nitride fill material
  • Metal-nitride liner with thicker bottom surface portion for heat insulation
  • High resistance/low power switching capability
  • Reduced amorphous phase change material volumes

Potential Applications

The technology can be applied in:

  • Memory storage devices
  • Data centers
  • Wearable technology

Problems Solved

The technology addresses issues such as:

  • Heat dissipation in memory cells
  • Efficiency in power consumption
  • Space constraints in electronic devices

Benefits

The benefits of this technology include:

  • Improved heat insulation
  • Reduced energy consumption
  • Enhanced performance in memory storage

Potential Commercial Applications

Optimizing Memory Cells for Improved Efficiency and Performance


Original Abstract Submitted

A phase change material (PCM) memory cell having a metal heater element of sub-EUV dimension. The PCM memory cell includes a bottom electrode of a metal-containing material, a memory cell structure including a phase change material; and a metal heater element of sub-extreme ultraviolet (sub-EUV) dimension situated between and electrically connecting the bottom electrode and PCM memory cell structure. The metal heater element is formed of a circular via structure of sub-EUV dimension and has a seamless metal-nitride fill material. The circular via structure of sub-extreme ultraviolet (sub-EUV) dimension further includes a metal-nitride liner of sub-EUV dimension, the metal-nitride liner of sub-EUV dimension including a thicker metal-nitride liner bottom surface portion and thinner sidewall metal-nitride portions. The thicker metal-nitride liner bottom surface portion improves heat insulation and provides for high resistance/low power switching and reduced amorphous phase change material volumes.

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