17942822. Pillar Based Memory (MRAM) Embedded within the Buried Power Rail within a Backside Power Distribution Network simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
- 1 Pillar Based Memory (MRAM) Embedded within the Buried Power Rail within a Backside Power Distribution Network
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Pillar Based Memory (MRAM) Embedded within the Buried Power Rail within a Backside Power Distribution Network - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Original Abstract Submitted
Pillar Based Memory (MRAM) Embedded within the Buried Power Rail within a Backside Power Distribution Network
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Wu-Chang Tsai of Albany NY (US)
Alexander Reznicek of Troy NY (US)
Michael Rizzolo of Delmar NY (US)
Ailian Zhao of Slingerlands NY (US)
Pillar Based Memory (MRAM) Embedded within the Buried Power Rail within a Backside Power Distribution Network - A simplified explanation of the abstract
This abstract first appeared for US patent application 17942822 titled 'Pillar Based Memory (MRAM) Embedded within the Buried Power Rail within a Backside Power Distribution Network
Simplified Explanation
The patent application describes an apparatus with a backside power distribution network, a backside power rail connected to the network, and a backside contact via linking at least one front end of line transistor to the backside power rail, with the backside contact via featuring a pillar-based memory device.
- Backside power distribution network
- Backside power rail
- Backside contact via with a pillar-based memory device
Potential Applications
This technology could be applied in the semiconductor industry for improving power distribution and connectivity in electronic devices.
Problems Solved
1. Enhanced power distribution efficiency 2. Improved connectivity for front end of line transistors
Benefits
1. Increased performance of electronic devices 2. Enhanced reliability of power distribution 3. Simplified manufacturing processes
Potential Commercial Applications
Optimizing Power Distribution in Semiconductor Devices
Original Abstract Submitted
An apparatus comprising a backside power distribution network; a backside power rail joined to the backside power distribution network; and a backside contact via that couples at least one front end of line transistor to the backside power rail; wherein the backside contact via comprises a pillar based memory device.
