17851026. PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE WITH AIR GAP simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE WITH AIR GAP
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Kuo-Ching Huang of Hsinchu (TW)
Harry-Hak-Lay Chuang of Hsinchu (TW)
PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE WITH AIR GAP - A simplified explanation of the abstract
This abstract first appeared for US patent application 17851026 titled 'PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE WITH AIR GAP
Simplified Explanation
The patent application describes a phase-change material (PCM) switching device that includes a base dielectric layer, heater elements, metal pads, and a PCM region. The PCM region can switch between an amorphous state and a crystalline state in response to heat generated by the heater elements. An air gap surrounds the heater elements from three sides.
- The device includes a base dielectric layer and a semiconductor substrate.
- There are two heater elements: a first heater element made of a metal with a certain coefficient of thermal expansion (CTE), and a second heater element made of a metal with a larger CTE.
- The PCM region, which contains the phase-change material, is located above the second heater element.
- The PCM can switch between an amorphous state and a crystalline state when heated by the first and second heater elements.
- An air gap surrounds the heater elements from three sides.
Potential Applications
- Data storage: The PCM switching device can be used in non-volatile memory applications, such as phase-change random access memory (PCRAM).
- Logic circuits: The device can be integrated into logic circuits to enable reconfigurable computing and programmable logic.
- Neuromorphic computing: The PCM switching device can be used in neuromorphic computing systems to mimic the behavior of biological neural networks.
Problems Solved
- Limited scalability: The PCM switching device addresses the scalability issue in conventional memory technologies by providing a compact and efficient solution.
- High power consumption: The device offers lower power consumption compared to traditional memory technologies, making it more energy-efficient.
- Limited endurance: The PCM switching device provides improved endurance, allowing for a higher number of read/write cycles.
Benefits
- Compact design: The device has a small footprint, making it suitable for integration into various electronic systems.
- Low power consumption: The PCM switching device offers energy-efficient operation, reducing power requirements.
- High endurance: The device has improved endurance, enabling a longer lifespan and increased reliability.
Original Abstract Submitted
A phase-change material (PCM) switching device includes: a base dielectric layer over a semiconductor substrate; a first heater element disposed on the base dielectric layer, the first heater element comprising a first metal element characterized by a first coefficient of thermal expansion (CTE); a second heater element disposed on the first heater element, the second heater element comprising a second metal element characterized by a second CTE larger than the first CTE; a first metal pad and a second metal pad; and a PCM region comprising a PCM operable to switch between an amorphous state and a crystalline state in response to heat generated by the first heater element and the second heater element, wherein the PCM region is disposed above a top surface of the second heater element, and an air gap surrounds the first heater element and the second heater element from three sides.
