17685942. MEMORY DEVICE INCLUDING VERTICAL STACK STRUCTURE, METHOD OF FABRICATING THE SAME, AND ELECTRONIC DEVICE INCLUDING MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
MEMORY DEVICE INCLUDING VERTICAL STACK STRUCTURE, METHOD OF FABRICATING THE SAME, AND ELECTRONIC DEVICE INCLUDING MEMORY DEVICE
Organization Name
Inventor(s)
Doyoon Kim of Hwaseong-si (KR)
Hyunjae Song of Hwaseong-si (KR)
Seungyeul Yang of Hwaseong-si (KR)
MEMORY DEVICE INCLUDING VERTICAL STACK STRUCTURE, METHOD OF FABRICATING THE SAME, AND ELECTRONIC DEVICE INCLUDING MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17685942 titled 'MEMORY DEVICE INCLUDING VERTICAL STACK STRUCTURE, METHOD OF FABRICATING THE SAME, AND ELECTRONIC DEVICE INCLUDING MEMORY DEVICE
Simplified Explanation
The patent application describes a memory device with a vertical stack structure, its manufacturing method, and its application in electronic devices. The memory device includes multiple layers such as an oxygen scavenger layer, a recording material layer, a channel layer, a gate insulating layer, and a gate electrode. The oxygen scavenger layer contains an element that creates oxygen vacancies in the recording material layer.
- The memory device has a vertical stack structure.
- It includes an oxygen scavenger layer that removes oxygen.
- The recording material layer is in direct contact with the oxygen scavenger layer.
- A channel layer is present on top of the recording material layer.
- A gate insulating layer is on top of the channel layer.
- A gate electrode is present on top of the gate insulating layer.
- The oxygen scavenger layer introduces oxygen vacancies in the recording material layer.
Potential applications of this technology:
- Memory devices in electronic devices such as smartphones, tablets, and computers.
- Data storage in various industries including automotive, aerospace, and healthcare.
- High-density memory devices for advanced computing systems.
Problems solved by this technology:
- Oxygen scavenger layer prevents the presence of oxygen, which can degrade the performance of the memory device.
- The introduction of oxygen vacancies in the recording material layer enhances the memory device's functionality and reliability.
Benefits of this technology:
- Improved memory device performance and reliability.
- Increased data storage capacity.
- Compatibility with various electronic devices and industries.
Original Abstract Submitted
Disclosed are a memory device including a vertical stack structure, a method of manufacturing the same, and/or an electronic device including the memory device. The memory device including a vertical stack structure includes an oxygen scavenger layer on a base substrate, a recording material layer on the oxygen scavenger layer and in direct contact with the oxygen scavenger layer, a channel layer on the recording material layer, a gate insulating layer on the channel layer, and a gate electrode on the gate insulating layer. The oxygen scavenger layer includes an element that forms oxygen vacancies in the recording material layer and does not include oxygen.
