17546178. ELECTRODE RECESSED PHASE CHANGE MEMORY PORE CELL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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ELECTRODE RECESSED PHASE CHANGE MEMORY PORE CELL

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Fabio Carta of Pleasantville NY (US)

Chung Hon Lam of Peekskill NY (US)

Wanki Kim of Chappaqua NY (US)

Robert L. Bruce of White Plains NY (US)

ELECTRODE RECESSED PHASE CHANGE MEMORY PORE CELL - A simplified explanation of the abstract

This abstract first appeared for US patent application 17546178 titled 'ELECTRODE RECESSED PHASE CHANGE MEMORY PORE CELL

Simplified Explanation

The patent application describes a memory cell with a recessed bottom electrode and methods of forming the memory cell. Here is a simplified explanation of the abstract:

  • The memory cell includes a bottom electrode that is deposited on a layer of a structure.
  • A first insulator and a second insulator are deposited on top of the bottom electrode.
  • The first and second insulators are spaced apart to create an opening on top of the bottom electrode.
  • A recess is etched in the bottom electrode, specifically in the portion that is underneath the opening.
  • The recess and the opening together form a pore.
  • Phase change material is deposited in the pore to create a memory cell.

Potential applications of this technology:

  • Memory cells with recessed bottom electrodes can be used in various electronic devices, such as computers, smartphones, and tablets.
  • This technology can be applied in non-volatile memory devices, where data can be stored even when power is turned off.
  • It can also be used in high-speed memory devices, allowing for faster data access and retrieval.

Problems solved by this technology:

  • The recessed bottom electrode design helps to improve the performance and reliability of memory cells.
  • By creating a pore, the phase change material can be more effectively deposited, enhancing the functionality of the memory cell.
  • The spacing between the first and second insulators helps to prevent electrical interference and improve the overall efficiency of the memory cell.

Benefits of this technology:

  • Memory cells with recessed bottom electrodes offer improved data storage and retrieval capabilities.
  • The design allows for better control and manipulation of the phase change material, resulting in enhanced memory cell performance.
  • The technology provides a more reliable and efficient solution for non-volatile memory devices.


Original Abstract Submitted

A memory cell with a recessed bottom electrode and methods of forming the memory cell are described. A bottom electrode can be deposited on a layer of a structure. A first insulator and a second insulator can be deposited on top of the bottom electrode. The first insulator and the second insulator can be spaced apart from one another to form an opening on top of the bottom electrode. A recess can be etched in the bottom electrode. The recess can be etched in a portion of the bottom electrode that is underneath the opening. The recess and the opening can form a pore. Phase change material can be deposited in the pore to form a memory cell.

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