17931686. RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Paul Michael Solomon of Westchester NY (US)

Takashi Ando of Eastchester NY (US)

John Rozen of Hastings on Hudson NY (US)

Eduard Albert Cartier of New York NY (US)

RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 17931686 titled 'RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER

Simplified Explanation

The patent application describes a resistive random-access memory (RRAM) cell with a resistance spreading layer to limit resistance variability.

  • The RRAM cell includes a resistance spreading layer between the top and bottom electrodes.
  • The resistance spreading layer is in series with and has no impedance with a filament forming layer.
  • The resistance spreading layer can be positioned below or above the filament forming layer.
  • It may also be in series with and have no impedance with the bottom or top electrode.

Potential Applications

The technology can be applied in:

  • Memory storage devices
  • Neuromorphic computing
  • IoT devices

Problems Solved

  • Variability in resistance across RRAM cells
  • Improving reliability and performance of RRAM technology

Benefits

  • Enhanced stability and consistency in resistance levels
  • Increased efficiency and longevity of RRAM cells
  • Improved overall performance of RRAM-based systems

Potential Commercial Applications

Optimizing Resistance Variability in RRAM Cells for Enhanced Performance


Original Abstract Submitted

To limit resistance variability across a resistive random-access memory (RRAM) call, the disclosure includes an RRAM cell with a resistance spreading layer within the RRAM cell between the top and bottom electrodes of the RRAM cell. The resistance spreading layer is in series with and has no impedance with a filament forming layer of the RRAM cell. The resistance spreading layer may be below the filament forming layer or the resistance spreading layer may be above the filament forming layer. The resistance spreading layer may further be in series with and has no impedance with the bottom electrode or the top electrode.

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