17896081. MEMORY DEVICE AND METHOD OF MAKING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
MEMORY DEVICE AND METHOD OF MAKING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Hengyuan Lee of Hsinchu County (TW)
Cheng-Chun Chang of Taoyuan City (TW)
Tung-Ying Lee of Hsinchu City (TW)
MEMORY DEVICE AND METHOD OF MAKING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17896081 titled 'MEMORY DEVICE AND METHOD OF MAKING THE SAME
Simplified Explanation
The patent application describes a memory device with a phase change layer containing a specific composition of GeSbTe material.
- The memory device includes a substrate, a bottom electrode, a top electrode, and a phase change layer.
- The phase change layer contains GeSbTe material with specific composition percentages of Ge, Sb, and Te.
- Ge content is about 20 at % or less, Sb content is about 30 at % or more, and Te content is about 40 at % or more.
Potential applications of this technology:
- Non-volatile memory devices
- High-speed data storage
- Embedded memory in electronic devices
Problems solved by this technology:
- Improving memory device performance
- Enhancing data storage capacity
- Increasing data transfer speeds
Benefits of this technology:
- Higher efficiency in memory devices
- Improved reliability and durability
- Enhanced performance in electronic devices
Original Abstract Submitted
A memory device includes a substrate, a bottom electrode disposed over the substrate, a top electrode disposed over the bottom electrode, and a phase change layer disposed between the top electrode and bottom electrode. The phase change layer includes a GeSbTe material that contains a Ge content of about 20 at % or less, a Sb content of about 30 at % or more, and a Te content of about 40 at % at or more.
