17531149. REDUCING CONTACT RESISTANCE OF PHASE CHANGE MEMORY BRIDGE CELL simplified abstract (International Business Machines Corporation)
REDUCING CONTACT RESISTANCE OF PHASE CHANGE MEMORY BRIDGE CELL
Organization Name
International Business Machines Corporation
Inventor(s)
Kangguo Cheng of Schenectady NY (US)
ZUOGUANG Liu of Schenectady NY (US)
Arthur Gasasira of HALFMOON NY (US)
REDUCING CONTACT RESISTANCE OF PHASE CHANGE MEMORY BRIDGE CELL - A simplified explanation of the abstract
This abstract first appeared for US patent application 17531149 titled 'REDUCING CONTACT RESISTANCE OF PHASE CHANGE MEMORY BRIDGE CELL
Simplified Explanation
The abstract of the patent application describes a phase change memory technology that includes a substrate, first phase change elements, electrodes, and a second phase change element.
- The technology involves a substrate, which serves as the base for the memory device.
- The memory device consists of multiple first phase change elements that are placed on the substrate.
- Electrodes are also present on the first phase change elements, providing a means for electrical connections.
- A second phase change element is included in the design, connecting the electrodes and positioned between the first phase change elements.
Potential Applications
This phase change memory technology has potential applications in various fields, including:
- Data storage: The memory device can be used in storage devices like solid-state drives (SSDs) or non-volatile memory modules.
- Computing: It can be utilized in computer systems for faster and more efficient data processing.
- Internet of Things (IoT): The memory technology can be integrated into IoT devices to enhance their performance and storage capabilities.
Problems Solved
The phase change memory technology addresses several problems in the field of data storage and computing, such as:
- Limited storage capacity: By utilizing phase change elements, the memory device can provide higher storage capacity compared to traditional memory technologies.
- Slow data access: The technology enables faster data access and retrieval, improving overall system performance.
- Data retention: The phase change memory offers non-volatile storage, ensuring data retention even during power loss or system shutdown.
Benefits
The phase change memory technology offers several benefits, including:
- High storage density: The design allows for a greater number of memory elements to be packed into a smaller space, increasing storage density.
- Fast data access: The memory device provides quick read and write speeds, reducing data access latency.
- Non-volatile storage: The phase change memory retains data even without power, ensuring data integrity and reliability.
Original Abstract Submitted
A phase change memory includes a substrate, a plurality of first phase change elements on the substrate, a plurality of electrodes on the plurality of first phase change elements, and a second phase change element connecting the plurality of electrodes and disposed between the plurality of first phase change elements.
