17932942. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING SELECTIVE METAL NITRIDE DEPOSITION ON DIELECTRIC METAL OXIDE BLOCKING DIELECTRIC simplified abstract (SanDisk Technologies LLC)
Contents
- 1 THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING SELECTIVE METAL NITRIDE DEPOSITION ON DIELECTRIC METAL OXIDE BLOCKING DIELECTRIC
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING SELECTIVE METAL NITRIDE DEPOSITION ON DIELECTRIC METAL OXIDE BLOCKING DIELECTRIC - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING SELECTIVE METAL NITRIDE DEPOSITION ON DIELECTRIC METAL OXIDE BLOCKING DIELECTRIC
Organization Name
Inventor(s)
Tatsuya Hinoue of Yokkaichi (JP)
Tomohiro Uno of Yokkaichi (JP)
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING SELECTIVE METAL NITRIDE DEPOSITION ON DIELECTRIC METAL OXIDE BLOCKING DIELECTRIC - A simplified explanation of the abstract
This abstract first appeared for US patent application 17932942 titled 'THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING SELECTIVE METAL NITRIDE DEPOSITION ON DIELECTRIC METAL OXIDE BLOCKING DIELECTRIC
Simplified Explanation
The patent application describes a three-dimensional memory device with alternating insulating and conductive layers, a memory opening, and a memory opening fill structure containing dielectric-metal-oxide blocking dielectric portions, memory material layer, and a vertical semiconductor channel.
- The memory device includes an alternating stack of insulating layers and electrically conductive layers.
- The memory opening extends vertically through the alternating stack.
- The memory opening fill structure consists of dielectric-metal-oxide blocking dielectric portions, a memory material layer, and a vertical semiconductor channel.
- Each electrically conductive layer comprises a tubular metal nitride portion and a metal fill material portion.
- The tubular metal nitride portions surround and contact the dielectric-metal-oxide blocking dielectric portions.
- The metal fill material portions either contact overlying and underlying insulating layers or contact upper and lower metal nitride liner portions.
Potential Applications
This technology could be applied in:
- High-density memory devices
- Advanced semiconductor devices
Problems Solved
This technology addresses:
- Increasing memory storage capacity
- Enhancing semiconductor performance
Benefits
The benefits of this technology include:
- Improved memory device efficiency
- Enhanced data storage capabilities
Potential Commercial Applications
This technology could be utilized in:
- Data centers
- Consumer electronics
Possible Prior Art
Prior art related to three-dimensional memory devices and semiconductor structures may exist, but specific examples are not provided in the abstract.
Unanswered Questions
How does this technology compare to existing memory device structures?
This article does not provide a direct comparison to existing memory device structures, making it difficult to assess the novelty and advantages of the described technology.
What are the specific manufacturing processes involved in creating this three-dimensional memory device?
The abstract does not detail the specific manufacturing processes used to fabricate the memory device, leaving a gap in understanding the practical implementation of the innovation.
Original Abstract Submitted
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a set of dielectric-metal-oxide blocking dielectric portions located at levels of the electrically conductive layers, a memory material layer, and a vertical semiconductor channel. Each of the electrically conductive layers includes a tubular metal nitride portion and a metal fill material portion, each of the tubular metal nitride portions laterally surrounds and contacts a respective one of the dielectric-metal-oxide blocking dielectric portions, and each metal fill material portion either contacts respective overlying and underlying insulating layers of the insulating layers, or contacts respective upper and lower metal nitride liner portions which have a smaller thickness than the tubular metal nitride portions.
