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Category:G11C13/00
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Pages in category "G11C13/00"
The following 79 pages are in this category, out of 79 total.
1
- 17529215. TUNABLE TRUE RANDOM NUMBER GENERATOR simplified abstract (International Business Machines Corporation)
- 17540820. DRIFT MITIGATION FOR RESISTIVE MEMORY DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545195. GLOBAL HEATER FOR PHASE CHANGE MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545671. SELECTIVE APPLICATION OF MULTIPLE PULSE DURATIONS TO CROSSBAR ARRAYS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551457. MEMORY CELL IN WAFER BACKSIDE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17581351. PHASE-CHANGE MEMORY CELL AND METHOD FOR FABRICATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17699756. NEUROMORPHIC MEMORY CIRCUIT AND OPERATING METHOD THEROF simplified abstract (Samsung Electronics Co., Ltd.)
- 17717339. NEUROMORPHIC COMPUTING DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17818617. RANDOM NUMBER GENERATION BASED ON THRESHOLD VOLTAGE RANDOMNESS simplified abstract (Micron Technology, Inc.)
- 17830004. DEVICE WITH NEURAL NETWORK simplified abstract (Samsung Electronics Co., Ltd.)
- 17831311. PRE-DECODER CIRCUITRY simplified abstract (Micron Technology, Inc.)
- 17831414. INTERNAL REFERENCE RESISTOR FOR NON-VOLATILE MEMORY simplified abstract (Micron Technology, Inc.)
- 17855483. FORWARD-LOOKING DETERMINATION OF READ VOLTAGE USING MEMORY CELL PATTERNS simplified abstract (Micron Technology, Inc.)
- 17877613. MEMORY CELL READ OPERATION TECHNIQUES simplified abstract (Micron Technology, Inc.)
- 17888298. STORING BITS WITH CELLS IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 17895988. TRIGGERING OF STRONGER WRITE PULSES IN A MEMORY DEVICE BASED ON PRIOR READ OPERATIONS simplified abstract (Micron Technology, Inc.)
- 17896506. MEMORY DEVICE AND MANUFACTURING METHOD AND TEST METHOD OF THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17896963. CASCODED SENSE AMPLIFIERS FOR SELF-SELECTING MEMORY simplified abstract (Micron Technology, Inc.)
- 17897021. FORWARD LOOKING ALGORITHM FOR VERTICAL INTEGRATED CROSS-POINT ARRAY MEMORY simplified abstract (Micron Technology, Inc.)
- 17931277. SEQUENCE ALIGNMENT WITH MEMORY ARRAYS simplified abstract (Micron Technology, Inc.)
- 17957945. DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A FERROELECTRIC RESISTIVE JUNCTION simplified abstract (Intel Corporation)
- 17957957. MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT simplified abstract (Intel Corporation)
- 17992143. APPARATUS AND METHOD WITH IN-MEMORY PROCESSING simplified abstract (Samsung Electronics Co., Ltd.)
- 18060884. SEMICONDUCTOR MEMORY DEVICE INCLUDING CHALCOGENIDE simplified abstract (SK hynix Inc.)
- 18071740. VARIABLE RESISTANCE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18094351. ARTIFICIAL NEURAL NETWORK CIRCUIT simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18105935. PHASE-CHANGE MATERIAL-BASED XOR LOGIC GATES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18156543. VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18156707. STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18156734. MEMORY DEVICE, INTEGRATED CIRCUIT DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18157408. MEMORY DEVICE INCLUDING SWITCHING MATERIAL AND PHASE CHANGE MATERIAL simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18166859. NEUROMORPHIC APPARATUS HAVING 3D STACKED SYNAPTIC STRUCTURE AND MEMORY DEVICE HAVING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18451946. MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18464093. NON-VOLATILE MEMORY DEVICE AND CORRESPONDING METHOD OF OPERATION simplified abstract (STMICROELECTRONICS S.R.L.)
- 18478776. SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18516521. SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18516733. STRESSING ALGORITHM FOR SOLVING CELL-TO-CELL VARIATIONS IN PHASE CHANGE MEMORY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519964. SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS simplified abstract (Micron Technology, Inc.)
- 18521109. MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18528935. ACCELERATION OF MODEL/WEIGHT PROGRAMMING IN MEMRISTOR CROSSBAR ARRAYS simplified abstract (HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP)
- 18545245. THREE-STATE PROGRAMMING OF MEMORY CELLS simplified abstract (Micron Technology, Inc.)
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- Huawei technologies co., ltd. (20240114808). PHASE-CHANGE STORAGE UNIT, PHASE-CHANGE MEMORY, ELECTRONIC DEVICE, AND PREPARATION METHOD simplified abstract
- Huawei technologies co., ltd. (20240130253). PHASE CHANGE MEMORY, ELECTRONIC DEVICE, AND PREPARATION METHOD FOR PHASE CHANGE MEMORY simplified abstract
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on April 18th, 2024
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on April 4th, 2024
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- Taiwan semiconductor manufacturing co., ltd. (20240099024). SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240099025). MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240127887). STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE simplified abstract
- Taiwan Semiconductor manufacturing Co., Ltd. patent applications on April 18th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
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- US Patent Application 17746244. MEMORY DEVICE, INTEGRATED CIRCUIT DEVICE AND METHOD simplified abstract
- US Patent Application 17752785. WORDLINE BOOST BY CHARGE SHARING IN A MEMORY DEVICE simplified abstract
- US Patent Application 17826180. FIRST FIRE OPERATION FOR OVONIC THRESHOLD SWITCH SELECTOR simplified abstract
- US Patent Application 18232768. CIRCUITS AND METHODS FOR COMPENSATING A MISMATCH IN A SENSE AMPLIFIER simplified abstract
- US Patent Application 18305268. PHASE-CHANGE MEMORY CELL simplified abstract
- US Patent Application 18362393. INTEGRATED CIRCUIT AND METHOD simplified abstract
- US Patent Application 18362863. MEMORY CELL ARRAY CIRCUIT AND METHOD OF FORMING THE SAME simplified abstract
- US Patent Application 18366348. NEUROMORPHIC CHIP FOR UPDATING PRECISE SYNAPTIC WEIGHT VALUES simplified abstract