US Patent Application 18305268. PHASE-CHANGE MEMORY CELL simplified abstract

PHASE-CHANGE MEMORY CELL

Organization Name

STMICROELECTRONICS S.r.l.

Inventor(s)

Paolo Giuseppe Cappelletti of Seveso (IT)

Gabriele Navarro of Moirans (FR)

PHASE-CHANGE MEMORY CELL - A simplified explanation of the abstract

This abstract first appeared for US patent application 18305268 titled 'PHASE-CHANGE MEMORY CELL

Simplified Explanation

The patent application is about phase-change memory cells and their manufacturing and operation methods.

• The phase-change memory cell consists of a heater and a stack.
• The stack includes at least one layer of germanium or nitrogen-doped germanium, and at least one layer of a first alloy containing germanium, antimony, and tellurium.
• A resistive layer is positioned between the heater and the stack.

Original Abstract Submitted

Phase-change memory cells and methods of manufacturing and operating phase-change memory cells are provided. In at least one embodiment, a phase-change memory cell includes a heater and a stack. The stack includes at least one germanium layer or a nitrogen doped germanium layer, and at least one layer of a first alloy including germanium, antimony, and tellurium. A resistive layer is located between the heater and the stack.