Taiwan semiconductor manufacturing co., ltd. (20240099025). MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
- 1 MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Sai-Hooi Yeong of Hsinchu (TW)
Chenchen Jacob Wang of Hsinchu (TW)
MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099025 titled 'MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The memory device described in the abstract includes various components such as bit lines, word lines, memory cells, source lines, and a controller. The memory cell consists of transistors and data storage elements, with the controller applying voltages to the source lines during operations.
- Memory device components:
- Bit lines - Word lines - Memory cells - Source lines - Controller
- Memory cell structure:
- First transistor - Data storage elements - Second transistors - Gate connected to word line - First and second source/drains
- Controller operation:
- Applies voltage to source lines - Controls selected data storage elements
Potential Applications
The technology described in this patent application could be applied in various memory devices such as RAM, flash memory, and solid-state drives.
Problems Solved
This technology solves the problem of efficiently controlling and accessing data storage elements within memory cells.
Benefits
The benefits of this technology include faster data access, improved memory cell performance, and increased reliability in memory devices.
Potential Commercial Applications
Optimizing Memory Cell Performance for Enhanced Data Storage Efficiency
Possible Prior Art
One possible prior art could be the use of similar memory cell structures in existing memory devices, such as NAND flash memory.
Unanswered Questions
How does this technology compare to existing memory cell structures in terms of performance and reliability?
The article does not provide a direct comparison between this technology and existing memory cell structures.
What are the specific voltage levels applied to the source lines by the controller during operations?
The article does not specify the exact voltage levels applied to the source lines by the controller.
Original Abstract Submitted
a memory device includes at least one bit line, at least one word line, at least one memory cell, at least one source line, and a controller electrically coupled to the at least one memory cell via the at least one word line, the at least one bit line, and the at least one source line. the memory cell includes a first transistor, data storage elements, and second transistors corresponding to the data storage elements. the first transistor includes a gate electrically coupled to the word line, and first and second source/drains. each data storage element and the corresponding second transistor are electrically coupled in series with the first source/drain of the first transistor and the bit line. the controller controllably applies a voltage other than a ground voltage to the at least one source line in an operation of a selected data storage element among the data storage elements.
