20240029790. DEVICE WITH RECONFIGURABLE SHORT TERM DATA RETENTION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

From WikiPatents
Jump to navigation Jump to search

DEVICE WITH RECONFIGURABLE SHORT TERM DATA RETENTION

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Ghazi Sarwat Syed of Zurich (CH)

Abu Sebastian of Adliswil (CH)

DEVICE WITH RECONFIGURABLE SHORT TERM DATA RETENTION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240029790 titled 'DEVICE WITH RECONFIGURABLE SHORT TERM DATA RETENTION

Simplified Explanation

The invention described in the patent application is a device that consists of multiple resistive memory elements made of a resistive material. The device is designed to apply programming pulses to a subset of these resistive memory elements, causing a temporary change in resistance of the resistive material in that subset. This programming process allows the subset of resistive elements to be switched from a first resistance state (representing a first binary state) to a second resistance state (representing a second binary state).

One important aspect of this device is that the resistance of the subset of resistive elements automatically reverts back to the first resistance state during a predefined retention period. This reversion happens due to an inherent material property of the resistive material. As a result, the second binary state is automatically deleted without the need for any additional intervention.

  • The device comprises multiple resistive memory elements made of a resistive material.
  • Programming pulses are applied to a subset of these resistive memory elements to temporarily change their resistance.
  • This programming process allows the subset of resistive elements to switch from a first resistance state to a second resistance state.
  • The resistance of the subset of resistive elements automatically reverts back to the first resistance state during a predefined retention period.
  • The reversion is achieved through an inherent material property of the resistive material, eliminating the need for manual deletion.

Potential Applications:

  • Non-volatile memory devices
  • Data storage systems
  • Artificial intelligence and machine learning applications
  • Internet of Things (IoT) devices
  • Wearable technology

Problems Solved:

  • Efficient and reliable storage and retrieval of data
  • Simplified memory programming and deletion processes
  • Reduction in power consumption and operational costs
  • Enhanced data security and privacy

Benefits:

  • Faster data processing and retrieval
  • Lower power consumption and energy efficiency
  • Improved reliability and durability of memory devices
  • Simplified memory management and maintenance
  • Enhanced data security and privacy measures


Original Abstract Submitted

the invention is notably directed to a device comprising a plurality of resistive memory elements. the plurality of resistive memory elements comprises a resistive material. the device is configured to apply programming pulses to a subset of the plurality of resistive memory elements to perform a temporary resistance change of the resistive material of the subset for a predefined retention period, thereby programming the subset of the plurality of resistive elements from a first resistance state corresponding to a first binary state to a second resistance state corresponding to a second binary state. the device is configured such that a resistance of the subset of the plurality of resistive elements reverts automatically during the predefined retention period from the second resistance state to the first resistance state by an inherent material property of the resistive material, thereby automatically deleting the second binary state.