17540820. DRIFT MITIGATION FOR RESISTIVE MEMORY DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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DRIFT MITIGATION FOR RESISTIVE MEMORY DEVICES

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Guy M. Cohen of Ossining NY (US)

Takashi Ando of Eastchester NY (US)

Nanbo Gong of White Plains NY (US)

Kevin W. Brew of Niskayuna NY (US)

DRIFT MITIGATION FOR RESISTIVE MEMORY DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17540820 titled 'DRIFT MITIGATION FOR RESISTIVE MEMORY DEVICES

Simplified Explanation

The abstract describes a patent application for resistive memory devices that can prevent resistance drift. The device includes a phase-change element, a resistive liner, and three electrodes. The resistive liner is in contact with one surface of the phase-change element, while the first and second electrodes are connected to the ends of the resistive liner. The third electrode is connected to the surface of the phase-change element.

  • The patent application is for a resistive memory device that addresses resistance drift.
  • The device includes a phase-change element, a resistive liner, and three electrodes.
  • The resistive liner is in contact with one surface of the phase-change element.
  • The first and second electrodes are connected to the ends of the resistive liner.
  • The third electrode is connected to the surface of the phase-change element.

Potential Applications

  • Resistive memory devices can be used in various electronic devices, such as computers, smartphones, and IoT devices.
  • These devices can be used for data storage, allowing for faster and more efficient access to information.

Problems Solved

  • Resistance drift is a common issue in resistive memory devices, leading to data loss and reduced performance.
  • This patent application proposes a solution to mitigate resistance drift, improving the reliability and longevity of the memory devices.

Benefits

  • By preventing resistance drift, the resistive memory devices can maintain their performance and data integrity over time.
  • The use of a resistive liner and multiple electrodes helps stabilize the resistance of the memory device, reducing the impact of environmental factors.
  • This technology can lead to more reliable and durable resistive memory devices, enhancing the overall user experience.


Original Abstract Submitted

Resistive memory devices are provided which are configured to mitigate resistance drift. A device comprises a phase-change element, a resistive liner, a first electrode, a second electrode, and a third electrode. The resistive liner is disposed in contact with a first surface of the phase-change element. The first electrode is coupled to a first end portion of the resistive liner. The second electrode is coupled to a second end portion of the resistive liner. The third electrode is coupled to the first surface of the phase-change element.

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