18451946. MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

MEMORY DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

CHIEN-AN Lai of Hsinchu County (TW)

CHUNG-CHENG Chou of Hsin-Chu (TW)

YU-DER Chih of Hsin-Chu City (TW)

MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18451946 titled 'MEMORY DEVICE

Simplified Explanation

The patent application describes a memory device that consists of multiple cells arranged in a matrix. Each cell is connected to a bit line, and a voltage control circuit is connected to a selected bit line. The voltage control circuit includes a voltage detection circuit that detects the supply voltage and a voltage source selection circuit that selects a voltage source based on the detected supply voltage. The selected voltage source is then connected to the bit line to provide a write voltage.

• The memory device includes multiple cells arranged in a matrix.
• Each cell is connected to a bit line.
• The voltage control circuit is connected to a selected bit line.
• The voltage detection circuit detects the instantaneous supply voltage.
• The voltage source selection circuit selects a voltage source based on the detected supply voltage.
• A switch connects the selected voltage source to the selected bit line to provide a write voltage.

Potential Applications:

• This memory device can be used in various electronic devices such as computers, smartphones, and tablets.
• It can be utilized in data storage systems, allowing for efficient and reliable data storage and retrieval.

Problems Solved:

• The voltage control circuit ensures that the appropriate voltage source is selected based on the detected supply voltage, preventing any potential damage to the memory device.
• The use of multiple cells arranged in a matrix allows for a higher storage capacity and faster data access.

Benefits:

• The memory device provides efficient and reliable data storage and retrieval.
• The voltage control circuit ensures the safety and longevity of the memory device.
• The use of multiple cells arranged in a matrix allows for a higher storage capacity and faster data access.

Original Abstract Submitted

A memory device is provided, the memory device includes multiple cells arranged in a matrix of multiple rows and multiple columns. The memory device further includes multiple bit lines each of which is connected to first cells of the multiple cells arranged in a row of the multiple rows. A voltage control circuit is connectable to a selected bit line of the multiple bit lines and includes a voltage detection circuit that detects an instantaneous supply voltage and a voltage source selection circuit connected to the voltage detection circuit. The voltage source selection circuit selects a voltage source from multiple voltage sources based on the detected instantaneous supply voltage. The voltage source selection circuit includes a switch that connects the selected voltage source to the selected bit line to provide a write voltage.