17581351. PHASE-CHANGE MEMORY CELL AND METHOD FOR FABRICATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
PHASE-CHANGE MEMORY CELL AND METHOD FOR FABRICATING THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chun-Wei Chang of Hsinchu (TW)
Chih-Hung Nien of Hsinchu (TW)
PHASE-CHANGE MEMORY CELL AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17581351 titled 'PHASE-CHANGE MEMORY CELL AND METHOD FOR FABRICATING THE SAME
Simplified Explanation
The abstract describes a phase-change memory (PCM) cell that can change its data state through a write operation consisting of a reset stage and a set stage. In the reset stage, multiple reset current pulses are applied to the PCM cell, gradually increasing in current amplitude. In the set stage, multiple set current pulses are applied, also increasing in current amplitude but smaller than the reset current pulses.
- The patent application describes a phase-change memory (PCM) cell with specific write operation stages.
- The write operation includes a reset stage and a set stage.
- In the reset stage, the PCM cell is subjected to multiple reset current pulses with increasing current amplitudes.
- In the set stage, the PCM cell is exposed to multiple set current pulses with increasing current amplitudes, but smaller than the reset current pulses.
Potential Applications
- This technology can be applied in non-volatile memory systems, such as solid-state drives (SSDs) and computer memory modules.
- It can be used in various electronic devices that require high-speed and reliable data storage.
Problems Solved
- The patent addresses the need for an efficient and reliable method to change the data state of a phase-change memory cell.
- By using specific reset and set stages with increasing current amplitudes, the patent solves the problem of accurately and consistently changing the data state of the PCM cell.
Benefits
- The proposed write operation provides a more controlled and precise way to change the data state of a PCM cell.
- By gradually increasing the current amplitudes in the reset and set stages, the patent ensures reliable and consistent data storage.
- This technology can lead to improved performance and reliability in non-volatile memory systems.
Original Abstract Submitted
A phase-change memory (PCM) cell is provided to include a first electrode, a second electrode, and a phase-change feature disposed between the first electrode and the second electrode. The phase-change feature is configured to change its data state based on a write operation performed on the PCM cell. The write operation includes a reset stage and a set stage. In the reset stage, a plurality of reset current pulses are applied to the PCM cell, and the reset current pulses have increasing current amplitudes. In the set stage, a plurality of set current pulses are applied to the PCM cell, and the set current pulses exhibit an increasing trend in current amplitude. The current amplitudes of the set current pulses are smaller than those of the reset current pulses.
