US Patent Application 18362863. MEMORY CELL ARRAY CIRCUIT AND METHOD OF FORMING THE SAME simplified abstract
Contents
MEMORY CELL ARRAY CIRCUIT AND METHOD OF FORMING THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chung-Cheng Chou of Hsinchu (TW)
MEMORY CELL ARRAY CIRCUIT AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18362863 titled 'MEMORY CELL ARRAY CIRCUIT AND METHOD OF FORMING THE SAME
Simplified Explanation
The patent application describes a method for operating a memory circuit.
- The method involves generating a first current in response to a first voltage, which includes a combination of leakage currents and a write current.
- A tracking circuit is used to generate a second set of leakage currents that mimic the first set of leakage currents in the first column of memory cells.
- A first current mirror is used to mirror the first current in a first path with a second current in a second path.
- The second current includes the second set of leakage currents and a second write current, which corresponds to the first write current.
- The first set of leakage currents also corresponds to the second set of leakage currents.
Original Abstract Submitted
A method of operating a memory circuit includes generating a first current in response to a first voltage. The first current includes a first set of leakage currents and a first write current. The method further includes generating, by a tracking circuit, a second set of leakage currents configured to track the first set of leakage currents of the first column of memory cells, and mirroring the first current in a first path with a second current in a second path by a first current mirror. The second current includes the second set of leakage currents and a second write current. The first write current corresponds to the second write current. The first set of leakage currents corresponds to the second set of leakage currents.
