Huawei technologies co., ltd. (20240114808). PHASE-CHANGE STORAGE UNIT, PHASE-CHANGE MEMORY, ELECTRONIC DEVICE, AND PREPARATION METHOD simplified abstract
Contents
- 1 PHASE-CHANGE STORAGE UNIT, PHASE-CHANGE MEMORY, ELECTRONIC DEVICE, AND PREPARATION METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PHASE-CHANGE STORAGE UNIT, PHASE-CHANGE MEMORY, ELECTRONIC DEVICE, AND PREPARATION METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
PHASE-CHANGE STORAGE UNIT, PHASE-CHANGE MEMORY, ELECTRONIC DEVICE, AND PREPARATION METHOD
Organization Name
Inventor(s)
PHASE-CHANGE STORAGE UNIT, PHASE-CHANGE MEMORY, ELECTRONIC DEVICE, AND PREPARATION METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240114808 titled 'PHASE-CHANGE STORAGE UNIT, PHASE-CHANGE MEMORY, ELECTRONIC DEVICE, AND PREPARATION METHOD
Simplified Explanation
The patent application describes a phase-change storage array with phase-change storage units, each containing a phase-change thin film composed of a phase-change material layer and a heterojunction layer. The lattice mismatch degree between the heterojunction material and the phase-change material is less than or equal to 20%, and the melting point of the heterojunction material is greater than the melting point of the phase-change material.
- Phase-change storage array with phase-change storage units
- Each unit has a phase-change thin film with a phase-change material layer and a heterojunction layer
- Lattice mismatch degree between materials is less than or equal to 20%
- Melting point of heterojunction material is higher than melting point of phase-change material
Potential Applications
The technology can be applied in:
- Data storage devices
- Non-volatile memory systems
- High-speed computing systems
Problems Solved
The technology addresses issues related to:
- Data retention in storage devices
- Speed and efficiency of memory systems
- Compatibility of materials in electronic devices
Benefits
The benefits of this technology include:
- Improved data storage capacity
- Faster data access and retrieval
- Enhanced reliability and durability of electronic devices
Potential Commercial Applications
The technology can be utilized in various commercial sectors such as:
- Information technology
- Consumer electronics
- Telecommunications industry
Possible Prior Art
One possible prior art could be the use of phase-change materials in memory devices, but the specific combination of phase-change material and heterojunction layer as described in the patent application may be novel.
Unanswered Questions
How does the technology impact energy consumption in electronic devices?
The article does not provide information on the energy efficiency of devices using this technology.
What are the potential challenges in scaling up production of these phase-change arrays?
The article does not address the scalability issues or challenges in mass production of the described technology.
Original Abstract Submitted
examples of phase-change arrays, phase-change memories, and electronic devices are described. in one example, a phase-change storage array includes a number of phase-change storage units, each of which includes a phase-change thin film. the phase-change thin film includes a phase-change material layer and a heterojunction layer, and the phase-change material layer is in contact with the heterojunction layer. the phase-change material layer is formed by using a phase-change material, and the heterojunction layer is formed by using a heterojunction material. a lattice mismatch degree between the heterojunction material and the phase-change material is less than or equal to 20%, a contact crystal surface of the heterojunction material and a contact crystal surface of the phase-change material have a same lattice angle, and a melting point of the heterojunction material is greater than a melting point of the phase-change material.
