17831414. INTERNAL REFERENCE RESISTOR FOR NON-VOLATILE MEMORY simplified abstract (Micron Technology, Inc.)

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INTERNAL REFERENCE RESISTOR FOR NON-VOLATILE MEMORY

Organization Name

Micron Technology, Inc.

Inventor(s)

Neil Petrie of St. Louis Park MN (US)

Yoav Weinberg of Weinberg (CA)

INTERNAL REFERENCE RESISTOR FOR NON-VOLATILE MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 17831414 titled 'INTERNAL REFERENCE RESISTOR FOR NON-VOLATILE MEMORY

Simplified Explanation

The abstract describes an example apparatus that includes an array of memory cells and a memory controller. The memory controller has an internal reference resistor and is configured to monitor memory characteristics for the array and the memory controller. It can also trim the internal reference resistor to achieve a target resistance value based on the memory characteristics.

  • The apparatus includes an array of memory cells and a memory controller.
  • The memory controller has an internal reference resistor.
  • The memory controller monitors memory characteristics for the array and itself.
  • The memory controller trims the internal reference resistor to achieve a target resistance value based on the memory characteristics.

Potential Applications

  • This technology can be applied in various memory devices such as solid-state drives (SSDs), random-access memory (RAM), and non-volatile memory (NVM).
  • It can be used in electronic devices like smartphones, tablets, computers, and IoT devices that rely on memory storage.

Problems Solved

  • The technology solves the problem of maintaining accurate memory characteristics in memory devices.
  • It addresses the challenge of ensuring consistent and reliable performance of memory cells over time.
  • It solves the issue of maintaining the desired resistance value in the internal reference resistor.

Benefits

  • The memory controller's ability to monitor and trim the internal reference resistor allows for precise control of memory characteristics.
  • By adjusting the internal reference resistor, the memory controller can compensate for variations and aging effects, ensuring consistent performance.
  • The technology improves the overall reliability and longevity of memory devices by actively managing memory characteristics.


Original Abstract Submitted

An example apparatus include an array of memory cells. The example apparatus includes a memory controller coupled to the array. The memory controller can include an internal reference resistor. The memory controller can be configured to monitor memory characteristics for the array and the memory controller. The memory controller can be configured to trim the internal reference resistor to result in a target resistance value based on the memory characteristics.