Huawei technologies co., ltd. (20240130253). PHASE CHANGE MEMORY, ELECTRONIC DEVICE, AND PREPARATION METHOD FOR PHASE CHANGE MEMORY simplified abstract

From WikiPatents
Jump to navigation Jump to search

PHASE CHANGE MEMORY, ELECTRONIC DEVICE, AND PREPARATION METHOD FOR PHASE CHANGE MEMORY

Organization Name

huawei technologies co., ltd.

Inventor(s)

Ping Ma of Hangzhou (CN)

Xiang Li of Shanghai (CN)

PHASE CHANGE MEMORY, ELECTRONIC DEVICE, AND PREPARATION METHOD FOR PHASE CHANGE MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240130253 titled 'PHASE CHANGE MEMORY, ELECTRONIC DEVICE, AND PREPARATION METHOD FOR PHASE CHANGE MEMORY

Simplified Explanation

The abstract describes a phase change memory comprising multiple memory cells with specific structural features.

  • Each memory cell includes a first electrode, a phase change body, and a second electrode arranged sequentially in a first direction.
  • The phase change body has a convergence portion between its first and second end faces, with a smaller sectional area compared to the end faces.
  • The preparation method for this phase change memory is also provided.

Potential Applications

Phase change memories can be used in various electronic devices such as computers, smartphones, and IoT devices for data storage applications.

Problems Solved

This technology offers a high-speed, non-volatile memory solution with low power consumption, addressing the limitations of traditional memory technologies.

Benefits

The phase change memory provides fast read and write speeds, high endurance, and scalability for future memory requirements.

Potential Commercial Applications

The technology can be applied in consumer electronics, data centers, and automotive systems for efficient and reliable data storage solutions.

Possible Prior Art

Prior art in phase change memory technology includes research and development by companies like Intel and Micron, as well as academic institutions exploring similar memory concepts.

Unanswered Questions

How does the convergence portion in the phase change body affect the overall performance of the memory cells?

The abstract does not provide specific details on the impact of the convergence portion on memory cell operation and efficiency.

Are there any specific challenges in the preparation method for this phase change memory technology?

The abstract mentions a preparation method but does not elaborate on any potential difficulties or complexities in implementing this process.


Original Abstract Submitted

an example phase change memory, as well as an electronic device comprising an example phase change memory, include a plurality of phase change memory cells. each of the plurality of phase change memory cells includes a first electrode, a phase change body, and a second electrode, which are sequentially arranged in a first direction. the phase change body has a first end face facing the first electrode and a second end face facing the second electrode. the phase change body further includes a convergence portion, and the convergence portion is located between the first end face and the second end face, where a sectional area of the convergence portion in a direction perpendicular to the first direction is relatively smaller than an area of the first end face and an area of the second end face. a preparation method for a phase change memory is also provided.