US Patent Application 17746244. MEMORY DEVICE, INTEGRATED CIRCUIT DEVICE AND METHOD simplified abstract
Contents
MEMORY DEVICE, INTEGRATED CIRCUIT DEVICE AND METHOD
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Meng-Fan Chang of Hsinchu (TW)
MEMORY DEVICE, INTEGRATED CIRCUIT DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 17746244 titled 'MEMORY DEVICE, INTEGRATED CIRCUIT DEVICE AND METHOD
Simplified Explanation
The patent application describes a memory device with specific components and connections.
- The memory device includes word lines, bit lines, a source line, transistors, and data storage elements.
- The transistors are connected in series between the first and second source line contacts of the source line.
- The gates of the transistors are connected to corresponding word lines.
- Each data storage element is connected between a common terminal of a pair of adjacent transistors and a corresponding bit line.
Original Abstract Submitted
A memory device includes a set of word lines, a set of bit lines, a source line having first and second source line contacts, a set of transistors serially coupled between the first and second source line contacts of the source line, and a set of data storage elements. The set of transistors has gates coupled to corresponding word lines in the set of word lines. Each data storage element in the set of data storage elements is coupled between a common terminal of a corresponding pair of adjacent transistors in the set of transistors, and a corresponding bit line in the set of bit lines.
