Taiwan semiconductor manufacturing co., ltd. (20240127887). STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE simplified abstract
Contents
- 1 STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Hiroki Noguchi of Hsinchu City (TW)
Ku-Feng Lin of New Taipei City (TW)
STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240127887 titled 'STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE
Simplified Explanation
The memory device described in the abstract includes sense amplifiers and a reference cell, with the sense amplifiers transmitting a read current and the reference cell having a decreased resistance value as the number of sense amplifiers increases.
- Sense amplifiers with first and second terminals are connected to a memory cell block.
- The second terminals of the sense amplifiers are coupled together to transmit a read current.
- The reference cell transmits the read current to a ground terminal.
- The resistance value of the reference cell decreases as the number of sense amplifiers increases.
Potential Applications
The technology described in this patent application could be applied in:
- Solid-state drives
- Computer memory modules
- Embedded systems
Problems Solved
This technology helps in:
- Improving memory read performance
- Reducing power consumption
- Enhancing data storage reliability
Benefits
The benefits of this technology include:
- Faster read speeds
- Lower energy consumption
- Increased data integrity
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Consumer electronics
- Data centers
- Automotive electronics
Possible Prior Art
One possible prior art for this technology could be the use of reference cells in memory devices to improve read performance and reduce power consumption.
Unanswered Questions
How does this technology compare to existing memory devices in terms of read speed and power consumption?
This article does not provide a direct comparison with existing memory devices in terms of read speed and power consumption. Further research or testing would be needed to make a comparison.
What are the potential limitations or drawbacks of implementing this technology in memory devices?
The article does not address any potential limitations or drawbacks of implementing this technology in memory devices. Further analysis or testing would be required to identify any such limitations.
Original Abstract Submitted
a memory device is provided. the memory device includes several sense amplifiers and at least one reference cell. each of the sense amplifiers has a first terminal and a second terminal. the first terminals of the sense amplifiers are coupled to a memory cell block, and the second terminals of the sense amplifiers are coupled together to transmit a read current. the at least one reference cell transmits the read current to a ground terminal. the at least one reference cell has a decreased resistance value when a number n of the sense amplifiers increases.
