17818617. RANDOM NUMBER GENERATION BASED ON THRESHOLD VOLTAGE RANDOMNESS simplified abstract (Micron Technology, Inc.)
RANDOM NUMBER GENERATION BASED ON THRESHOLD VOLTAGE RANDOMNESS
Organization Name
Inventor(s)
Innocenzo Tortorelli of Cernusco Sui Naviglio (IT)
[[:Category:Matteo Impal� of Milano (IT)|Matteo Impal� of Milano (IT)]][[Category:Matteo Impal� of Milano (IT)]]
Cécile Colette Solange Nail of Meylan (FR)
RANDOM NUMBER GENERATION BASED ON THRESHOLD VOLTAGE RANDOMNESS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17818617 titled 'RANDOM NUMBER GENERATION BASED ON THRESHOLD VOLTAGE RANDOMNESS
Simplified Explanation
- Memory device uses threshold voltage randomness for random number generation - Applies voltage to chalcogenide element until threshold voltage is reached - Detects state of oscillating signal when threshold voltage is reached - Outputs logic value corresponding to state of oscillating signal - Threshold voltage of chalcogenide element varies randomly across voltage applications - State of oscillating signal at threshold voltage varies randomly - Output logic value is random and suitable for random number generation
Potential Applications
This technology can be used in: - Encryption - Secure communication - Gaming - Statistical analysis
Problems Solved
- Generating truly random numbers - Improving security in various applications - Enhancing data encryption
Benefits
- Enhanced security - Improved data encryption - Reliable random number generation
Original Abstract Submitted
Methods, systems, and devices for random number generation based on threshold voltage randomness are described. For example, a memory device may apply a voltage to a chalcogenide element and increase the applied voltage at least until the applied voltage satisfies a threshold voltage associated with the chalcogenide element. The memory device may detect the state of an oscillating signal at a time at which the applied voltage satisfies the threshold voltage, and the memory device may output a logic value corresponding to the state of the oscillating signal. The threshold voltage of the chalcogenide element may vary in a statistically random manner across voltage applications, and hence the state of the oscillating signal at the time an applied voltage reaches the threshold voltage may likewise vary in a statistically random manner, and thus the corresponding logic value that is output may be a random value suitable for random number generation.
