17855483. FORWARD-LOOKING DETERMINATION OF READ VOLTAGE USING MEMORY CELL PATTERNS simplified abstract (Micron Technology, Inc.)

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FORWARD-LOOKING DETERMINATION OF READ VOLTAGE USING MEMORY CELL PATTERNS

Organization Name

Micron Technology, Inc.

Inventor(s)

Umberto Di Vincenzo of Capriate San Gervasio (BG) (IT)

Ferdinando Bedeschi of Biassono (MB) (IT)

Christian Marc Benoit Caillat of Boise ID (US)

FORWARD-LOOKING DETERMINATION OF READ VOLTAGE USING MEMORY CELL PATTERNS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17855483 titled 'FORWARD-LOOKING DETERMINATION OF READ VOLTAGE USING MEMORY CELL PATTERNS

Simplified Explanation

The patent application describes a memory device that uses multiple groups of pattern cells to select a voltage for reading memory cells.

  • The memory device includes multiple groups of pattern cells.
  • Different magnitude levels of voltages are applied to each group of pattern cells.
  • The controller determines which group of pattern cells first switch at the lowest magnitude of applied voltage.
  • Based on the first group to switch, the controller selects a read voltage.
  • The selected read voltage is used to read data cells corresponding to a codeword.

Potential Applications

This technology has potential applications in various fields, including:

  • Memory devices and systems
  • Data storage and retrieval systems
  • Computer hardware and electronics industry

Problems Solved

The technology addresses the following problems:

  • Efficient selection of voltage for reading memory cells
  • Improved reliability and accuracy in reading data cells
  • Optimization of memory device performance

Benefits

The technology offers the following benefits:

  • Enhanced speed and efficiency in reading memory cells
  • Improved data retrieval and storage capabilities
  • Increased reliability and accuracy in memory operations


Original Abstract Submitted

Systems, methods, and apparatus for a memory device that uses multiple groups of pattern cells to select a voltage for reading memory cells. In one approach, a controller applies different magnitude levels of voltages to each of the groups of pattern cells. The controller determines which of the groups have pattern cells that first switch (e.g., switch at the lowest magnitude of applied voltage). Based on identifying the first group to switch, the controller selects a read voltage. The selected read voltage is used to read data cells (e.g., corresponding to a codeword).

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