18516733. STRESSING ALGORITHM FOR SOLVING CELL-TO-CELL VARIATIONS IN PHASE CHANGE MEMORY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
STRESSING ALGORITHM FOR SOLVING CELL-TO-CELL VARIATIONS IN PHASE CHANGE MEMORY
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
STRESSING ALGORITHM FOR SOLVING CELL-TO-CELL VARIATIONS IN PHASE CHANGE MEMORY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18516733 titled 'STRESSING ALGORITHM FOR SOLVING CELL-TO-CELL VARIATIONS IN PHASE CHANGE MEMORY
Simplified Explanation
The patent application provides a process for trimming PCRAM cells to achieve consistent programming curves.
- Initial programming curves of PCRAM cells are measured.
- A target programming curve is established for the PCRAM cells.
- Each PCRAM cell is individually modulated to align with the target programming curve.
Potential Applications
This technology can be applied in the semiconductor industry for improving the performance and reliability of PCRAM cells in memory devices.
Problems Solved
1. Inconsistencies in programming curves of PCRAM cells. 2. Difficulty in achieving desired programming characteristics in PCRAM cells.
Benefits
1. Enhanced performance and reliability of PCRAM cells. 2. Improved efficiency in programming PCRAM cells to meet specific requirements. 3. Consistent and predictable behavior of PCRAM cells in memory devices.
Original Abstract Submitted
A process is provided to trim PCRAM cells to have consistent programming curves. Initial programming curves of PCRAM cells are measured. A target programming curve is set up for the PCRAM cells. Each PCRAM cell is then modulated individually to meet the target programming curve.
