Category:H01L29/78
The IPC classification "H01L29/78" is structured as follows:
- Section H: Electricity
- Class H01: Basic Electric Elements
- Subclass H01L: Semiconductor Devices; Electric Solid State Devices Not Otherwise Provided For
- Main Group H01L29/00: Semiconductor devices adapting junction formation for particular applications
- Subgroup H01L29/78: Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission
This classification involves semiconductor devices designed specifically for light emission, including technologies like Light Emitting Diodes (LEDs), laser diodes, and other optoelectronic devices.
Regarding famous inventors and organizations in this category:
Inventors: 1. Nick Holonyak Jr.: Often credited with the invention of the first practical visible-spectrum LED in 1962. 2. Shuji Nakamura: Known for the development of the blue LED, a crucial breakthrough that led to the creation of white LED lighting.
Organizations: 1. Sony Corporation: Has been instrumental in the development of laser diodes, especially for consumer electronics like CD and Blu-ray players. 2. Cree Inc.: Known for their innovations in LED lighting technology. 3. Philips: A key player in the LED market, Philips has been involved in the development of LED lighting solutions for various applications. 4. Osram: A global company that has contributed significantly to the development of semiconductor light sources, including LEDs.
These inventors and companies have played crucial roles in the advancement of semiconductor light-emitting technologies, which have revolutionized lighting and display industries, among others.
Pages in category "H01L29/78"
The following 200 pages are in this category, out of 1,354 total.
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- Taiwan semiconductor manufacturing company, ltd. (20240178321). Fin Field-Effect Transistor Device with Composite Liner for the Fin simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240203987). SEMICONDUCTOR DEVICE HAVING EPITAXY SOURCE/DRAIN REGIONS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240204044). Confined Source/Drain Epitaxy Regions and Method Forming Same simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240204045). SEMICONDUCTOR DEVICES WITH BACKSIDE POWER RAIL AND METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240204069). SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240204084). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240204104). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240204105). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240204106). Semiconductor Device and Method simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240212762). SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240213313). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240213340). SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240213344). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240213367). TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240215254). MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240234420). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240234421). Gate Structures Having Neutral Zones to Minimize Metal Gate Boundary Effects and Methods of Fabricating Thereof simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240234506). SEMICONDUCTOR DEVICE WITH DOPED STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240234526). SILICIDE-LAYER-COUPLED DOPED PORTION OF ACTIVE REGION AND METHOD OF FABRICATING SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240234527). INTER BLOCK FOR RECESSED CONTACTS AND METHODS FORMING SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240234534). METHODS OF FORMING FINFET DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240234548). METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN STRUCTURE HAVING MODIFIED SHAPE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240234549). SEMICONDUCTOR DEVICE STRUCTURE WITH INNER SPACER LAYER simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240242750). FERROELECTRIC FET-BASED CONTENT-ADDRESSABLE MEMORY simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240243129). EMBEDDED SEMICONDUCTOR REGION FOR A LATCH-UP SUSCEPTIBILITY IMPROVEMENT simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240243189). ISOLATION STRUCTURES FOR TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240243190). METAL GATE STRUCTURES AND METHODS OF FABRICATING THE SAME IN FIELD-EFFECT TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240258100). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240258237). SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240258311). SEMICONDUCTOR DEVICE HAVING NANOSHEETS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240258312). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240258319). SEMICONDUCTOR DEVICE WITH IMPROVED DEVICE PERFORMANCE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240258373). TRANSISTOR DEVICE HAVING A GATE SETBACK FROM A GATE DIELECTRIC simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240258390). SEMICONDUCTOR DEVICE, FINFET DEVICE AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240258429). MERGED SOURCE/DRAIN FEATURES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240266167). EPITAXIAL BLOCKING LAYER FOR MULTI-GATE DEVICES AND FABRICATION METHODS THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240266223). METHOD FOR FORMING LONG CHANNEL BACK-SIDE POWER RAIL DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240266397). Semiconductor Devices Having Funnel-Shaped Gate Structures simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240266398). Source/Drain Device and Method of Forming Thereof simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240266412). CONTACT STRUCTURE WITH ARCHED TOP SURFACE AND FABRICATION METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240266415). Gate Dielectric for Gate Leakage Reduction simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240266439). SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN MULTI-LAYER STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240282639). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240282640). ASYMMETRIC EPITAXY REGIONS FOR LANDING CONTACT PLUG simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240282816). NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240282820). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240282840). SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240282859). Gate Contact And Via Structures In Semiconductor Devices simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240284679). THREE-DIMENSIONAL MEMORY DEVICE AND METHOD simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290652). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290659). SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290712). INTERCONNECT STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290836). Gate Structures For Semiconductor Devices simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290850). SEMICONDUCTOR STRUCTURE WITH BACKSIDE SELF-ALIGNED CONTACT AND METHOD FOR FORMING SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290852). Source/Drain Contacts and Methods of Forming Same simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290863). SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290865). CFET WITH VIA FUSE STRUCTURE AND METHOD simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290867). FinFET Device and Method simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290869). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290870). METHODS FOR FORMING MULTI-GATE TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290886). SEMICONDUCTOR DEVICE AND METHOD simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290887). SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240292591). MEMORY DEVICES WITH GATE ALL AROUND TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240297082). SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240297228). SELECTIVE SILICIDE FOR STACKED MULTI-GATE DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240297235). AIR SPACERS AROUND CONTACT PLUGS AND METHOD FORMING SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240297236). METHODS OF REDUCING CAPACITANCE IN FIELD-EFFECT TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240297251). MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240297252). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240297253). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240297254). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304620). FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304628). METHODS OF FORMING SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304685). TRANSISTOR CONTACTS AND METHODS OF FORMING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304689). SEMICONDUCTOR DEVICE WITH AIR-GAP SPACERS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304721). LATERALLY DIFFUSED MOSFET AND METHOD OF FABRICATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304724). METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304725). FinFET Structures and Methods of Forming the Same simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304730). TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240306360). SEMICONDUCTOR DEVICE WITH GATE RECESS AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240321746). BUTTED CONTACTS AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240321880). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240321881). INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240321890). FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240321966). DEVICE WITH EPITAXIAL SOURCE/DRAIN REGION simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240321985). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240322000). GATE STACK TREATMENT FOR FERROELECTRIC TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240322010). REDUCING PATTERN LOADING IN THE ETCH-BACK OF METAL GATE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240322013). SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240322016). GATE STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240322040). THRESHOLD VOLTAGE TUNING OF NFET VIA IMPLEMENTATION OF AN ALUMINUM-FREE CONDUCTIVE LAYER simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240322041). LINER FOR A BI-LAYER GATE HELMET AND THE FABRICATION THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240322044). STACKED GATE-ALL-AROUND FINFET AND METHOD FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240324228). MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 11th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 25th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on August 1st, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on August 22nd, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on August 29th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on August 8th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 15th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on July 11th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on July 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on June 20th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on June 27th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on March 28th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 30th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on September 12th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on September 26th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on September 5th, 2024
- Texas instruments incorporated (20240113217). TRENCH SHIELDED TRANSISTOR simplified abstract
- Texas instruments incorporated (20240178283). LDMOS DEVICE AND METHOD OF FABRICATION OF SAME simplified abstract
- Texas instruments incorporated (20240178318). LOCOS FILLET FOR DRAIN REDUCED BREAKDOWN IN HIGH VOLTAGE TRANSISTORS simplified abstract
- Texas instruments incorporated (20240282854). Power Transistor IC with Thermopile simplified abstract
- Texas instruments incorporated (20240321677). SEMICONDUCTOR DEVICES WITH THERMOELECTRIC COOLER simplified abstract
- TEXAS INSTRUMENTS INCORPORATED patent applications on April 4th, 2024
- Texas Instruments Incorporated patent applications on August 22nd, 2024
- TEXAS INSTRUMENTS INCORPORATED patent applications on May 30th, 2024
- Texas Instruments Incorporated patent applications on September 26th, 2024
- TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION patent applications on March 21st, 2024
- TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION patent applications on September 19th, 2024
- Toshiba Electronic Devices & Storage Corporation patent applications on September 26th, 2024
- TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION patent applications on September 5th, 2024
U
- US Patent Application 17752211. SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATION THEREOF simplified abstract
- US Patent Application 17752610. TRANSISTOR WITH GATE ATTACHED FIELD PLATE simplified abstract
- US Patent Application 17804438. HIGH-VOLTAGE SEMICONDUCTOR DEVICES AND METHODS OF FORMATION simplified abstract
- US Patent Application 17824249. SEMICONDUCTOR DEVICE STRUCTURE WITH SOURCE/DRAIN STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- US Patent Application 17824690. GATE PROFILE MODULATION FOR SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 17824915. EPITAXIAL SOURCE/DRAIN STRUCTURE WITH HIGH DOPANT CONCENTRATION simplified abstract
- US Patent Application 17826872. SELECTIVE EPITAXY TO CREATE A DOUBLE-DIFFUSED CHANNEL OVER PLANAR OR UNDERLYING TOPOGRAPHY simplified abstract
- US Patent Application 17827755. FERROELECTRIC FIELD EFFECT TRANSISTOR AND METHODS OF FORMING THE SAME simplified abstract
- US Patent Application 17879913. SEMICONDUCTOR STRUCTURE simplified abstract
- US Patent Application 18151021. SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME simplified abstract
- US Patent Application 18181229. FERROELECTRIC-BASED MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- US Patent Application 18227236. HIGH-IMPLANT CHANNEL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- US Patent Application 18227712. SPACER STRUCTURES FOR SEMICONDUCTOR DEVICES simplified abstract
- US Patent Application 18229682. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- US Patent Application 18231772. RADIO FREQUENCY SWITCH simplified abstract
- US Patent Application 18231847. SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING simplified abstract
- US Patent Application 18232159. Channel Structures For Semiconductor Devices simplified abstract
- US Patent Application 18232171. Semiconductor Device With Isolation Structures simplified abstract
- US Patent Application 18232181. Profile Control Of Gate Structures In Semiconductor Devices simplified abstract
- US Patent Application 18232191. Gate Spacers In Semiconductor Devices simplified abstract
- US Patent Application 18232289. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18232510. VTFET WITH BURIED POWER RAILS simplified abstract
- US Patent Application 18232533. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- US Patent Application 18232544. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- US Patent Application 18232670. WRAP-AROUND TRENCH CONTACT STRUCTURE AND METHODS OF FABRICATION simplified abstract
- US Patent Application 18245098. SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE simplified abstract
- US Patent Application 18338759. Fin Field Effect Transistor (FinFET) Device and Method for Forming the Same simplified abstract
- US Patent Application 18343972. Semiconductor Devices Including Ferroelectric Memory and Methods of Forming the Same simplified abstract
- US Patent Application 18345188. METAL GATE STRUCTURE CUTTING PROCESS simplified abstract
- US Patent Application 18346020. POST-FORMATION MENDS OF DIELECTRIC FEATURES simplified abstract
- US Patent Application 18346511. SOURCE/DRAIN REGIONS OF FINFET DEVICES AND METHODS OF FORMING SAME simplified abstract
- US Patent Application 18349448. INTEGRATED CIRCUIT WITH SIDEWALL SPACERS FOR GATE STACKS simplified abstract
- US Patent Application 18349486. INPUT/OUTPUT DEVICES simplified abstract
- US Patent Application 18349617. SEMICONDUCTOR DEVICE WITH VARYING NUMBERS OF CHANNEL LAYERS AND METHOD OF FABRICATION THEREOF simplified abstract
- US Patent Application 18350838. Doping for Semiconductor Device with Conductive Feature simplified abstract
- US Patent Application 18351149. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- US Patent Application 18352133. Hybrid Channel Semiconductor Device and Method simplified abstract
- US Patent Application 18358112. Semiconductor Device and Method simplified abstract
- US Patent Application 18358508. Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment simplified abstract
- US Patent Application 18358609. Method of Forming a Semiconductor Device by Driving Hydrogen into a Dielectric Layer from Another Dielectric Layer simplified abstract
- US Patent Application 18358966. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- US Patent Application 18359051. SEMICONDUCTOR DEVICE WITH REDUCED LOADING EFFECT simplified abstract
- US Patent Application 18359542. EPITAXIAL STRUCTURES FOR FIN-LIKE FIELD EFFECT TRANSISTORS simplified abstract
- US Patent Application 18359597. SELF-ALIGNED INNER SPACER ON GATE-ALL-AROUND STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- US Patent Application 18360007. FIN END ISOLATION STRUCTURE FOR SEMICONDUCTOR DEVICES simplified abstract
- US Patent Application 18360080. Semiconductor Gate-All-Around Device simplified abstract
- US Patent Application 18360118. Multi-Gate Device Integration with Separated Fin-Like Field Effect Transistor Cells and Gate-All-Around Transistor Cells simplified abstract
- US Patent Application 18360166. Semiconductor Devices Having Gate Dielectric Layers of Varying Thicknesses and Methods of Forming the Same simplified abstract
- US Patent Application 18360265. INTEGRATED CIRCUITS WITH BACKSIDE POWER RAILS simplified abstract
- US Patent Application 18360457. ACTIVE PATTERN STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract
- US Patent Application 18360546. METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18360587. METHOD OF FORMING CONTACT METAL simplified abstract
- US Patent Application 18360804. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE simplified abstract
- US Patent Application 18361185. IC INCLUDING STANDARD CELLS AND SRAM CELLS simplified abstract
- US Patent Application 18361354. FinFETs With Epitaxy Regions Having Mixed Wavy and Non-Wavy Portions simplified abstract
- US Patent Application 18361464. SEMICONDUCTOR DEVICE WITH FIN ISOLATION simplified abstract
- US Patent Application 18361501. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18361592. Semiconductor Device with Reduced Contact Resistance and Methods of Forming the Same simplified abstract
- US Patent Application 18361622. LEAKAGE REDUCTION METHODS AND STRUCTURES THEREOF simplified abstract
- US Patent Application 18361704. SEMICONDUCTOR DEVICES WITH DIELECTRIC FINS AND METHOD FOR FORMING THE SAME simplified abstract
- US Patent Application 18361717. INNER FILLER LAYER FOR MULTI-PATTERNED METAL GATE FOR NANOSTRUCTURE TRANSISTOR simplified abstract
- US Patent Application 18361743. CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING simplified abstract
- US Patent Application 18361770. SOURCE/DRAIN CONTACT FORMATION METHODS AND DEVICES simplified abstract
- US Patent Application 18362862. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- US Patent Application 18363077. INTEGRATION OF LOW AND HIGH VOLTAGE DEVICES ON SUBSTRATE simplified abstract
- US Patent Application 18363439. MULTI-LAYERED INSULATING FILM STACK simplified abstract
- US Patent Application 18365315. Liner for A Bi-Layer Gate Helmet and the Fabrication Thereof simplified abstract
- US Patent Application 18365391. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
- US Patent Application 18365420. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
- US Patent Application 18366004. SEMICONDUCTOR STRUCTURE WITH SELF-ALIGNED BACKSIDE POWER RAIL simplified abstract
- US Patent Application 18366210. SOURCE/DRAIN SPACER WITH AIR GAP IN SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract
- US Patent Application 18366297. Nanowire Stack GAA Device with Inner Spacer and Methods for Producing the Same simplified abstract