US Patent Application 17752211. SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATION THEREOF simplified abstract

SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATION THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Jui-Lin Chang of Taipei (TW)]]

[[Category:Tsung-Yu Chiang of New Taipei (TW)]]

[[Category:Mi-Hua Lin of Hsinchu (TW)]]

[[Category:Cing-Yao Jhan of Keelung (TW)]]

SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATION THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17752211 titled 'SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATION THEREOF

Simplified Explanation

- The patent application addresses the problem of non-uniform channel heights across a substrate. - It proposes a solution by selectively implanting an isolation layer to modify the etching rate of the isolation layer around semiconductor fin structures before STI (shallow trench isolation) recess. - The purpose of this solution is to address any issues caused by the non-uniform channel heights and ensure uniformity in the substrate. - The patent application aims to simplify the process and improve the efficiency of STI recess.

Original Abstract Submitted

Embodiments of the present disclosure provides a solution to address any issues caused by non-uniform channel heights across a substrate. Particularly, an isolation layer is selectively implanted to alter etching rate of the isolation layer around semiconductor fin structures prior to STI recess.