US Patent Application 17804438. HIGH-VOLTAGE SEMICONDUCTOR DEVICES AND METHODS OF FORMATION simplified abstract
Contents
HIGH-VOLTAGE SEMICONDUCTOR DEVICES AND METHODS OF FORMATION
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==
[[Category:Jhu-Min Song of Nantou City (TW)]]
[[Category:Chien-Chih Chou of New Taipei City (TW)]]
[[Category:Yu-Chang Jong of Hsinchu City (TW)]]
HIGH-VOLTAGE SEMICONDUCTOR DEVICES AND METHODS OF FORMATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 17804438 titled 'HIGH-VOLTAGE SEMICONDUCTOR DEVICES AND METHODS OF FORMATION
Simplified Explanation
- The abstract describes a semiconductor device that uses the interlayer dielectric (ILD) layer as a gate oxide for high-voltage transistors. - This eliminates the need for additional process operations to deposit dedicated gate oxide layers. - The MEOL process and BEOL processes can be used to form the gate structures of the high-voltage transistors, eliminating the need for additional processing operations. - This innovation simplifies the manufacturing process and reduces the number of process steps required for high-voltage transistor fabrication.
Original Abstract Submitted
Interlayer dielectric (ILD) layer(s) of a semiconductor device may be configured as a gate oxide for high-voltage transistors, and therefore additional process operations to deposit dedicated gate oxide layers are not needed. Moreover, additional processing operations to form the gate structures of the high-voltage fin-based PMOS transistors and high-voltage fin-based NMOS transistors are not needed in that middle end of line (MEOL process and back end of line (BEOL) processes can be used as the gate formation process of the high-voltage transistors.
