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Category:H01L43/08
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Pages in category "H01L43/08"
The following 49 pages are in this category, out of 49 total.
1
- 17412665. METHOD AND STRUCTURE FOR IMPROVED MEMORY INTEGRITY AT ARRAY BOUNDARIES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17456088. Memory Device with Spin-Harvesting Structure simplified abstract (International Business Machines Corporation)
- 17457565. TOP ELECTRODE TO METAL LINE CONNECTION FOR MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY STACK HEIGHT REDUCTION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17526646. MRAM STRUCTURE WITH ENHANCED MAGNETICS USING SEED ENGINEERING simplified abstract (International Business Machines Corporation)
- 17534485. MAGNETORESISTIVE RANDOM-ACCESS MEMORY (MRAM) WITH PRESERVED UNDERLYING DIELECTRIC LAYER simplified abstract (International Business Machines Corporation)
- 17540389. UNIFORMLY PATTERNED TWO-TERMINAL DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17541401. DIELECTRIC FILL FOR TIGHT PITCH MRAM PILLAR ARRAY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17542696. SUBTRACTIVE TOP VIA AS A BOTTOM ELECTRODE CONTACT FOR AN EMBEDDED MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17544150. MAGNETIC TUNNEL JUNCTION WITH AN ETCHED BOTTOM ELECTRODE HAVING NON-PLANAR SIDEWALLS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545485. MAGNETIC TUNNEL JUNCTION PILLAR FORMATION FOR MRAM DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643582. MRAM BOTTOM ELECTRODE CONTACT WITH TAPER PROFILE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643594. PILLAR MEMORY TOP CONTACT LANDING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644349. MODIFIED TOP ELECTRODE CONTACT FOR MRAM EMBEDDING IN ADVANCED LOGIC NODES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17688196. MAGNETIC TUNNEL JUNCTION INCLUDING HEXAGONAL MULTI-LAYERED STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17688196. MAGNETIC TUNNEL JUNCTION INCLUDING HEXAGONAL MULTI-LAYERED STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17696968. METHODS OF MANUFACTURING MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17736652. MEMORY DEVICE AND FORMATION METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17751898. MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17806594. SIMULTANEOUS ELECTRODES FOR MAGNETO-RESISTIVE RANDOM ACCESS MEMORY DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17806750. MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH TAPERED SIDEWALLS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808561. MRAM DEVICE WITH SELF-ALIGNED BOTTOM ELECTRODES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17814057. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17887042. SPIN-ORBIT TORQUE MAGNETIC RANDOM-ACCESS MEMORY (SOT-MRAM) DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17931689. MAGNETORESISTIVE RANDOM-ACCESS MEMORY WITH TOP AND BOTTOM ELECTRODES DEPOSITED IN UNISON simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17932691. MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER simplified abstract (International Business Machines Corporation)
- 17945738. MAGNETO RESISTIVE ELEMENT simplified abstract (TDK Corporation)
- 17956938. SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL simplified abstract (International Business Machines Corporation)
- 17970788. MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17981734. Dual Magnetic Tunnel Junction Devices For Magnetic Random Access Memory (Mram) simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18048455. MRAM DEVICE WITH OCTAGON PROFILE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
A
I
- International business machines corporation (20240099148). MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER simplified abstract
- International business machines corporation (20240105244). STACKED FET WITH THREE-TERMINAL SOT MRAM simplified abstract
- International business machines corporation (20240112712). SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL simplified abstract
- International business machines corporation (20240130242). TOP CONTACT STRUCTURE FOR EMBEDDED MRAM simplified abstract
- International business machines corporation (20240130243). MAGNETIC TUNNEL JUNCTION DEVICE simplified abstract
- International business machines corporation (20240135978). MRAM DEVICE WITH OCTAGON PROFILE simplified abstract
- International Business Machines Corporation patent applications on April 18th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on April 25th, 2024
- International Business Machines Corporation patent applications on April 4th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on January 25th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 14th, 2024
- International Business Machines Corporation patent applications on March 21st, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 28th, 2024
U
- US Patent Application 17804795. MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH HEMISPHERICAL TOP ELECTRODE simplified abstract
- US Patent Application 17827998. MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- US Patent Application 17900892. MAGNETIC MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract